功率晶体管
P
C
- TA
32
–6
T
C
= TA
28
–5
I
B
= -40mA -35mA
–30mA
–25mA
–4
–20mA
–15mA
–10mA
–2
–5mA
–1
4
0
0
20
40
60
80 100 120 140 160
0
0
–2
–4
–6
–8
–10
–12
–1mA
0
0
– 0.4
– 0.8
–10
T
C
=25C
2SB967
I
C
— V
CE
–12
V
CE
=–2V
I
C
— V
BE
集电极耗散功率P
C
(W)
集电极电流I
C
(A)
24
20
16
12
8
集电极电流I
C
(A)
–8
25C
T
C
=100C
–25C
–3
–6
–4
–2
–1.2
–1.6
–2.0
环境温度Ta (C )
集电极到发射极电压V
CE
(V)
基极至发射极电压V
BE
(V)
V
CE ( SAT )
— I
C
集电极到发射极饱和电压V
CE ( SAT )
(V)
–100
I
C
/I
B
=30
–30
–10
–3
–1
100000
h
FE
— I
C
240
V
CE
=–2V
f
T
— I
E
V
CB
=–6V
f=200MHz
T
C
=25C
正向电流传输比H
FE
过渡频率f
T
(兆赫)
–10
30000
200
10000
160
3000
1000
300
–25C
100
30
10
– 0.01 – 0.03 – 0.1 – 0.3
T
C
=100C
25C
120
– 0.3
– 0.1
– 0.03
T
C
=100C
–25C
80
40
25C
– 0.01
– 0.01 – 0.03 – 0.1 – 0.3
0
–1
–3
1
3
10
30
100
–1
–3
–10
集电极电流I
C
(A)
集电极电流I
C
(A)
发射极电流I
E
(MA )
C
ob
— V
CB
200
集电极输出电容C
ob
(PF )
I
E
=0
f=1MHz
T
C
=25C
160
120
80
40
0
–1
–3
–10
–30
–100
集电极基极电压V
CB
(V)
2