N沟道场效应管PNM723T30V01 SOT-723 大量现货。
description
PNM723T30V01 is designed for high speed switching applications The enhancement mode MOS is extremely high density cell and low on-resistance.
Drain-Source Breakdown Voltage VDSS ID =10μA,VGS=0V 30 - - V
Zero Gate Voltage Drain Current IDSS VDS =30V,VGS=0V - - 1 μA
Gate-Body Leakage Current IGSS VDS =0V,VGS=±20V - - ±1 μA
Gate Threshold Voltage VGS(th) VDS =VGS, ID =250μA 0.5 - 1.5 V
Static Drain-Source On-Resistance RDS(ON)
VGS=2.5V, ID =1mA 6.5 9 Ω
VGS=2.5V, ID =10mA 7 9 Ω
VGS=4V, ID =10mA - 4 6 Ω
VGS=10V, ID =100mA - 3 5 Ω
PNM723T30V01
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