SPP03N60C3
SPP03N60C3属性
- SPP03N60C3
- INFINEON
SPP03N60C3描述
产品属性 属性值 搜索类似
制造商: Infineon
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 650 V
Id-连续漏极电流: 3.2 A
Rds On-漏源导通电阻: 1.4 Ohms
Vgs - 栅极-源极电压: - 20 V, + 20 V
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 38 W
通道模式: Enhancement
商标名: CoolMOS
封装: Tube
商标: Infineon Technologies
配置: Single
下降时间: 12 ns
高度: 15.65 mm
长度: 10 mm
产品类型: MOSFET
上升时间: 3 ns
系列: CoolMOS C3
500
子类别: MOSFETs
晶体管类型: 1 N-Channel
典型关闭延迟时间: 64 ns
典型接通延迟时间: 7 ns
宽度: 4.4 mm
零件号别名: SPP3N6C3XK SP000013524 SPP03N60C3HKSA1
单位重量: 2 g
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