SPP02N60C3XKSA1
SPP02N60C3XKSA1属性
- SPP02N60C3XKSA1
- INFINEON
SPP02N60C3XKSA1描述
产品属性 属性值 搜索类似
制造商: Infineon
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 600 V
Id-连续漏极电流: 1.8 A
Rds On-漏源导通电阻: 3 Ohms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Qg-栅极电荷: 9.5 nC
最小工作温度: - 55 C
最大工作温度: + 150 C
Pd-功率耗散: 25 W
商标名: CoolMOS
封装: Tube
商标: Infineon Technologies
配置: Single
下降时间: 12 ns
高度: 15.65 mm
长度: 10 mm
产品类型: MOSFET
上升时间: 3 ns
系列: CoolMOS C3
500
子类别: MOSFETs
晶体管类型: 1 N-Channel
典型关闭延迟时间: 68 ns
典型接通延迟时间: 6 ns
宽度: 4.4 mm
单位重量: 2 g
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