STY60NM60详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 600V 60A MAX247
- 系列:MDmesh™
- 制造商:STMicroelectronics
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:600V
- 电流_连续漏极333Id4440a025000C:60A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:55 毫欧 @ 30A,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:266nC @ 10V
- 输入电容333Ciss4440a0Vds:7300pF @ 25V
- 功率_最大:560W
- 安装类型:通孔
- 封装/外壳:MAX247?
- 供应商设备封装:MAX-247
- 包装:管件
- FET - 阵列 STMicroelectronics 8-SOIC(0.154",3.90mm 宽) MOSFET 2N-CH 20V 5A 8-SOIC
- 存储器 Micron Technology Inc 44-SOIC(0.496",12.60mm 宽) IC FLASH 8MBIT 90NS 44SOP
- 嵌入式 - 微控制器, Texas Instruments 64-VFQFN 裸露焊盘 IC MCU 16BIT 56K FLASH 64-VQFN
- FET - 单 STMicroelectronics MAX247? MOSFET N-CH 500V 60A MAX247
- 振荡器 TXC CORPORATION 4-SMD,无引线(DFN,LCC) OSC MEMS 15.8682 MHZ 1.8V SMD
- TVS - 二极管 Fairchild Semiconductor DO-214AA,SMB TVS BIDIRECT 600W 24V SMB
- TVS - 二极管 Littelfuse Inc DO-214AB,SMC DIODE TVS 130V 1500W BI 5% SMC
- FET - 单 STMicroelectronics 8-SOIC(0.154",3.90mm 宽) MOSFET N-CH 150V 5A SO8
- 存储器 Micron Technology Inc 44-SOIC(0.496",12.60mm 宽) IC FLASH 8MBIT 80NS 44SOP
- TVS - 二极管 Vishay Semiconductor Diodes Division DO-214AA,SMB TVS BIDIR 600W 24V 5% SMB
- 振荡器 TXC CORPORATION 4-SMD,无引线(DFN,LCC) OSC MEMS 150.000 MHZ 3.3V SMD
- TVS - 二极管 Littelfuse Inc DO-214AB,SMC DIODE TVS 130V 1500W BI 5% SMC
- FET - 单 STMicroelectronics 8-SOIC(0.154",3.90mm 宽) MOSFET N-CH 20V 6A 8SOIC
- 存储器 Micron Technology Inc 48-TFSOP(0.724",18.40mm 宽) IC FLASH 8MBIT 80NS 48TSOP
- TVS - 二极管 Vishay Semiconductor Diodes Division DO-214AA,SMB TVS BIDIR 600W 24V 5% SMB