IRF620STRL 全国供应商、价格、PDF资料
IRF620STRL详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 200V 5.2A D2PAK
- 系列:-
- 制造商:Vishay Siliconix
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:5.2A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:800 毫欧 @ 3.1A,10V
- Id时的Vgs333th444(最大):4V @ 250µA
- 闸电荷333Qg4440a0Vgs:14nC @ 10V
- 输入电容333Ciss4440a0Vds:260pF @ 25V
- 功率_最大:3W
- 安装类型:表面贴装
- 封装/外壳:TO-263-3,D²Pak(2 引线+接片),TO-263AB
- 供应商设备封装:D2PAK
- 包装:带卷 (TR)
IRF620STRLPBF详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 200V 5.2A D2PAK
- 系列:-
- 制造商:Vishay Siliconix
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:200V
- 电流_连续漏极333Id4440a025000C:5.2A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:800 毫欧 @ 3.1A,10V
- Id时的Vgs333th444(最大):4V @ 250µA
- 闸电荷333Qg4440a0Vgs:14nC @ 10V
- 输入电容333Ciss4440a0Vds:260pF @ 25V
- 功率_最大:3W
- 安装类型:表面贴装
- 封装/外壳:TO-263-3,D²Pak(2 引线+接片),TO-263AB
- 供应商设备封装:D²PAK
- 包装:带卷 (TR)
- 圆形 - 外壳 TE Connectivity CONN HSG RCPT JAM NUT 41POS SKT
- FET - 单 International Rectifier 8-SOIC(0.154",3.90mm 宽) MOSFET N-CH 20V 27A 8-SOIC
- 键盘 Tripp Lite SC-74,SOT-457 KEYBOARD MOUSE WIRELESS W/BASE
- 连接器,互连器件 Amphenol Industrial Operations CONN RCPT 5POS BOX MNT W/SCKT
- 圆形 - 外壳 TE Connectivity CONN HSG RCPT FLANGE 41POS PIN
- 圆形 - 外壳 TE Connectivity CONN HSG PLUG STRGHT 22POS SKT
- Card Edge, Edgeboard Connectors Sullins Connector Solutions 4-SIP,GSIB-5S CONN EDGECARD 12POS .156 EXTEND
- RF 天线 Laird Technologies IAS SC-74,SOT-457 ANT OMNIDIR DUAL BAND 5DBI N FEM
- 圆形 - 外壳 TE Connectivity CONN HSG RCPT JAM NUT 41POS SKT
- 连接器,互连器件 Amphenol Industrial Operations CONN RCPT 4POS BOX MNT W/PINS
- 连接器,互连器件 TE Connectivity CONN PLUG 22POS STRGHT W/PINS
- 圆形 - 外壳 TE Connectivity CONN HSG RCPT FLANGE 41POS PIN
- Card Edge, Edgeboard Connectors Sullins Connector Solutions 4-SIP,GSIB-5S CONN EDGECARD 12POS DIP .156 SLD
- 固定式 TE Connectivity 非标准 INDUCTOR 150UH 1.3A 20% SMD 1976
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 16-SOIC(0.295",7.50mm 宽) IC OPAMP INSTR 300KHZ SGL 16SOIC