FQB9N25CTM详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 250V 8.8A D2PAK
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:250V
- 电流_连续漏极333Id4440a025000C:8.8A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:430 毫欧 @ 4.4A,10V
- Id时的Vgs333th444(最大):4V @ 250µA
- 闸电荷333Qg4440a0Vgs:35nC @ 10V
- 输入电容333Ciss4440a0Vds:710pF @ 25V
- 功率_最大:3.13W
- 安装类型:表面贴装
- 封装/外壳:TO-263-3,D²Pak(2 引线+接片),TO-263AB
- 供应商设备封装:D²PAK
- 包装:带卷 (TR)
FQB9N25TM详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 250V 9.4A D2PAK
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:250V
- 电流_连续漏极333Id4440a025000C:9.4A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:420 毫欧 @ 4.7A,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:20nC @ 10V
- 输入电容333Ciss4440a0Vds:700pF @ 25V
- 功率_最大:3.13W
- 安装类型:表面贴装
- 封装/外壳:TO-263-3,D²Pak(2 引线+接片),TO-263AB
- 供应商设备封装:D²PAK
- 包装:带卷 (TR)
- FET - 单 Fairchild Semiconductor TO-263-3,D²Pak(2 引线+接片),TO-263AB MOSFET N-CH 250V 8A D2PAK
- 薄膜 Panasonic Electronic Components 3925(9863 公制) CAP FILM 1UF 100VDC 3925
- 矩形 Assmann WSW Components IDC CABLE - HKC50H/AE50M/HPK50H
- 薄膜 Panasonic Electronic Components 1206(3216 公制) CAP FILM 1200PF 100VDC 1206
- 矩形 Assmann WSW Components IDC CABLE - HKC50H/AE50M/HPK50H
- FET - 单 Fairchild Semiconductor TO-263-3,D²Pak(2 引线+接片),TO-263AB MOSFET N-CH 80V 9.3A D2PAK
- 薄膜 Panasonic Electronic Components 1913(4833 公制) CAP FILM 0.012UF 100VDC 1913
- 矩形 Assmann WSW Components IDC CABLE - HKC60H/AE60G/HPK60H
- 薄膜 Panasonic Electronic Components 2416(6041 公制) CAP FILM 0.12UF 100VDC 2416
- 薄膜 Panasonic Electronic Components 1913(4833 公制) CAP FILM 0.015UF 100VDC 1913
- 延时型 Omron Electronics Inc-IA Div RELAY REPEAT CYCLE ANLG 30HRS
- 薄膜 Panasonic Electronic Components 1913(4833 公制) CAP FILM 0.015UF 100VDC 1913
- 延时型 Omron Electronics Inc-IA Div RELAY REPEAT CYCLE ANALOG 30HRS
- FET - 单 Fairchild Semiconductor TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 200V 7.8A DPAK
- 薄膜 Panasonic Electronic Components 1913(4833 公制) CAP FILM 0.015UF 100VDC 1913