型号:STP19NM65N
类别:FET - 单
制造商:STMicroelectronics
封装:TO-220-3
描述:MOSFET N-CH 650V 15.5A TO-220
系列:MDmesh™
FET型:MOSFET N 通道,金属氧化物
FET特点:标准
漏极至源极电压333Vdss444:650V
电流_连续漏极333Id4440a025000C:15.5A
开态Rds111最大2220a0IdwwwwVgs0a025000C:270 毫欧 @ 7.75A,10V
Id时的Vgs333th444111最大222:4V @ 250µA
闸电荷333Qg4440a0Vgs:55nC @ 10V
输入电容333Ciss4440a0Vds:1900pF @ 50V
功率_最大:150W
安装类型:通孔
封装__外壳:TO-220-3
供应商设备封装:TO-220AB
包装:带卷 (TR)
厂 商:ST [ STMICROELECTRONICS ]
描 述:N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh? Power MOSFET
大 小:545K