型号:IPI100N06S3L-04
类别:FET - 单
制造商:Infineon Technologies
封装:TO-262-3,长引线,I²Pak,TO-262AA
描述:MOSFET N-CH 55V 100A TO-262
系列:OptiMOS™
FET型:MOSFET N 通道,金属氧化物
FET特点:逻辑电平门
漏极至源极电压333Vdss444:55V
电流_连续漏极333Id4440a025000C:100A
开态Rds111最大2220a0IdwwwwVgs0a025000C:3.8 毫欧 @ 80A,10V
Id时的Vgs333th444111最大222:2.2V @ 150µA
闸电荷333Qg4440a0Vgs:362nC @ 10V
输入电容333Ciss4440a0Vds:17270pF @ 25V
功率_最大:214W
安装类型:通孔
封装__外壳:TO-262-3,长引线,I²Pak,TO-262AA
供应商设备封装:PG-TO262-3
包装:管件
厂 商:INFINEON [ Infineon Technologies AG ]
描 述:OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)
大 小:477K