型号:2SJ655
类别:FET - 单
制造商:SANYO Semiconductor (U.S.A) Corporation
封装:TO-220-3 整包
描述:MOSFET P-CH 100V 12A TO-220ML
系列:-
FET型:MOSFET P 通道,金属氧化物
FET特点:逻辑电平门
漏极至源极电压333Vdss444:100V
电流_连续漏极333Id4440a025000C:12A
开态Rds111最大2220a0IdwwwwVgs0a025000C:136 毫欧 @ 6A,10V
Id时的Vgs333th444111最大222:-
闸电荷333Qg4440a0Vgs:41nC @ 10V
输入电容333Ciss4440a0Vds:2090pF @ 20V
功率_最大:2W
安装类型:通孔
封装__外壳:TO-220-3 整包
供应商设备封装:TO-220ML
包装:散装
厂 商:SANYO [ Sanyo Semicon Device ]
描 述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications
大 小:48K