牧师C09-09
AnaSem
VDA
系列
概述
VDA系列乃用于½电压范围的½功耗，高检测精度的电压检测器。VDA
系列达成的检测精度是以集成电路内以温度系数调整的高准确率参考电
压值来½基准。本集成电路采用最新的CMOS生产技术和激光微调技
术，与精锐的生产监控，也½提供CMOS或N-沟道的两种输出方式；而
集成电路的封装均½以SOT-23或SON-4类提供。
产品规格书
安纳森半导½
½电压，½功耗，
±1%
高精度电压检测
CMOS
电压检测器
无卤素
RoHS指令
符合标准
特点
检测电压范围·······························································
0.8V~6.0V (½以每0.1V间隔设定检测电压)
0.7V~6.0V
工½电压范围··································································
高精度电压检测
····················································· ±1% (V
DET
=1.8V~6.0V) / ±2% (V
DET
=0.8V~1.7V)
典型值。 ± 20ppm的/ ° C（ V
DET
= 1.8V~6.0V)
电压检测温度特性··································································
CMOS和N沟道开漏
输出类别
·························································································
½功耗
··································································典型值。 0.6μA （V
IN
= 1.5V)
–40°C
工½温度范围
·································································· ~ +85°C
SOT- 23 （ 400毫瓦） ， SON - 4 （ 400毫瓦）
小型封装
·························································································
应用范围
微型处理器的从设程序
各类系统的开动从设
电池充电检测
各类系统备用电源，电池开关控制
电池寿½检测
1
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牧师E13-01
产品数据表
AnaSem
模拟半导体IC
低电压，低功耗，± 1 ％的高检测精度的CMOS电压检测器
VDA系列
一般说明
该VDA系列电压检测，低电压，低功耗
耗和高的精度。所述检测电压的精度
基于高精度的参考电压来检测，该
温度系数进行控制。检测电压是在
高精度地通过使用激光微调技术。
卤素
RoHS指令
合规
特点
0.8V 6.0V （可选
检测电压范围··································································以0.1V的步）
0.7V~6.0V
工作电压范围··································································
±1% (V
DET
=1.8V~6.0V) / ±2% (V
DET
=0.8V~1.7V)
高精度检测电压·····················································
典型值。 ± 20ppm的/ ° C（ V
DET
= 1.8V~6.0V)
检测电压温度特性··································································
CMOS和N沟道开漏
输出类型·························································································
典型值。 0.6μA （V
IN
= 1.5V)
低电流消耗··································································
–40°C ~ +85°C
工作温度范围··································································
SOT- 23 （ 2.9 × 2.8 × 1.1毫米）
小型封装·························································································
应用
微处理器复位
上电系统的复位
充电检测电池
备用电池的记忆
电池续航时间监控
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牧师E13-01
VDA系列
产品NUMBERING指南
VDA
设计版本
包装形式
输出类型
A：T
OPR
= –40°C ~ +85°C
T： SOT - 23
C： CMOS输出
N： N沟道开漏输出
10 : ±1%
20 : ±2%
08 60 ：可选择与0.1V的步骤
在0.8V 6.0V的范围内
例如） 18： 1.8V
30 : 3.0V
检测准确率
检测电压
引脚配置/标记规格（ SOT -23 ）
引脚配置
VIN
3
号
1
2
符号
V
OUT
V
SS
V
IN
产量
说明
电源地
电压输入
A B C D E
F F F F
3
标识特定网络阳离子
1
VOUT
2
VSS
CODE
A
BC
D
E
F
标志
C或N
08~60
1或2的
A
内部规则
目录
输出类型
检测电压
检测准确率
VERSION
批号
（ TOP VIEW ）
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低电压，低功耗，± 1 ％的高检测精度的CMOS电压检测器
牧师E13-01
VDA系列
典型应用电路
CMOS输出
N沟道开漏输出
V
OUT
V
IN
V
SS
100K
V
IN
V
OUT
V
SS
框图
CMOS输出
V
IN
V
IN
N沟道开漏输出
+
电压
参考
V
OUT
电压
参考
+
_
V
OUT
_
VSS
VSS
绝对最大额定值
项
输入电压范围
输出电流
输出电压范围
功耗
※1)
SOT-23
符号
V
IN
I
OUT
V
OUT
P
D
T
OPR
T
英镑
评级
–0.3 ~ +7.0
50
V
SS
–0.3 ~ V
IN
+0.3
400
–40 ~ +85
–55 ~ +125
单位
V
mA
V
mW
°C
°C
工作温度范围
存储温度范围
注意：
※1)
功耗取决于安装在电路板的条件。
PCB尺寸为50mm ×50 × 1.6毫米。
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牧师E13-01
VDA系列
电气特性
（ TA = 25 ° C除非另有说明）
项
工作电压
符号
V
IN
V
DET
检测电压
V
DET
迟滞范围
V
HYS
V
IN
=0.7V
V
IN
=1.0V
V
IN
=2.0V
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
CMOS P沟道
V
DS
=2.1V
CMOS N沟道
V
DS
=2.1V
V
IN
=6.0V
V
IN
=6.0V
V
IN
=1.5V
V
IN
=2.0V
消耗电流
I
SS
V
IN
=3.0V
V
IN
=4.0V
V
IN
=5.0V
漏电流
I
泄漏
V
IN
=6.0V V
OUT
=6.0V
V
DET
= 1.8V ~ 6.0V
TA = -40°C - + 85°C
V
DET
= 0.8V ~ 1.7V
TA = -40°C - + 85°C
从V反转
DR
到V
OUT
条件
V
DET
= 0.8V ~ 6.0V
V
DET
= 1.8V ~ 6.0V
TA = -40°C - + 85°C
V
DET
= 0.8V ~ 1.7V
TA = -40°C - + 85°C
分钟。
0.7
V
DET
×0.99
V
DET
×0.98
V
DET
×0.02
0.1
1.0
3.0
5.0
6.0
7.0
-
1.5
-
-
-
-
-
-
-
-
-
典型值。
-
V
DET
V
DET
V
DET
×0.05
0.35
2.3
8.2
11.1
12.8
13.8
-9.5
9.5
0.6
0.7
0.8
0.9
1.0
10
±20
±100
0.03
马克斯。
6.0
V
DET
×1.01
V
DET
×1.02
V
DET
×0.08
-
-
-
-
-
-
-1.5
-
2.1
2.5
2.8
3.0
3.4
100
-
-
0.2
单位
V
V
1
V
V
mA
mA
mA
3
mA
mA
mA
mA
mA
A
A
A
A
A
nA
PPM /°C的
1
PPM /°C的
ms
5
3
2
4
3
1
TEST
电路
1
N沟道
V
DS
=0.5V
输出电流
I
OUT
检测电压
温度COEF网络cient
延迟时间
V
DR
→V
OUT
逆温
V
DET
/
ΔTA V
DET
T
DLY
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