UNR511x系列
■
电气特性
T
a
=
25°C
±
3°C
参数
集电极 - 基极电压(发射极开路)
集电极 - 发射极电压(基本开)
集电极 - 基极截止电流(发射极开路)
集电极 - 发射极截止电流(基地开)
发射极 - 基
UNR5110/5115/5116/5117
符号
V
CBO
V
首席执行官
I
CBO
I
首席执行官
I
EBO
条件
I
C
= 10 A,
I
E
=
0
I
C
= 2
妈,我
B
=
0
V
CB
= 50
V,I
E
=
0
V
CE
= 50
V,I
B
=
0
V
EB
= 6
V,I
C
=
0
民
50
50
0.1
0.5
0.01
0.1
0.2
0.4
0.5
1.0
1.5
2.0
h
FE
V
CE
=
10
V,I
C
=
5
mA
6
20
30
35
60
60
80
80
160
V
CE ( SAT )
V
OH
V
OL
I
C
= 10
妈,我
B
=
0.3毫安
I
C
= 10
妈,我
B
= 1.5
mA
V
CC
= 5
V, V
B
=
0.5 V ,R
L
=
1 k
V
CC
= 5
V, V
B
= 2.5
V ,R
L
=
1 k
V
CC
= 5
V, V
B
= 3.5
V ,R
L
=
1 k
V
CC
= 5
V, V
B
= 10
V ,R
L
=
1 k
V
CC
= 5
V, V
B
= 6
V ,R
L
=
1 k
f
T
R
1
V
CB
= 10
V,I
E
=
1毫安,女
=
200兆赫
V
CB
= 10
V,I
E
=
2毫安,女
=
200兆赫
30%
80
150
0.51
1.0
2.2
4.7
10
22
47
R
1
/R
2
0.08
0.047
0.1
0.10
0.21
0.12
+30%
k
兆赫
4.9
0.2
V
V
400
460
0.25
V
200
20
典型值
最大
单位
V
V
A
A
mA
截止目前UNR5113
(集电极开路) UNR5112 / 5114 / 511D /
511E/511M/511N/511T
UNR511Z
UNR5111
UNR511F/511H
UNR5119
UNR5118/511L/511V
正向电流UNR511V
传输比
UNR5118/511L
UNR5119/511D/511F/511H
UNR5111
UNR5112/511E
UNR511Z
UNR5113/5114/511M
UNR511N/511T
UNR5110
*
/5115
*
/5116
*
/5117
*
集电极 - 发射极饱和电压
UNR511V
输出电压高级别
输出电压低级别
UNR5113
UNR511D
UNR511E
跃迁频率
UNR5116
输入
阻力
UNR5118
UNR5119
UNR511H/511M/511V
UNR5116/511F/511L
511N/511Z
UNR5111/5114/5115
UNR5112/5117/511T
UNR5110/5113/511D/511E
阻力
比
UNR511M
UNR511N
UNR5118/5119
UNR511Z
2
SJH00022BED
UNR511x系列
■
电气特性(续)
T
a
=
25°C
±
3°C
参数
阻力
比
UNR5114
UNR511H
UNR511T
UNR511F
UNR511V
UNR5111/5112/5113/511L
UNR511E
UNR511D
0.8
1.70
3.7
0.37
符号
条件
民
0.17
0.17
典型值
0.21
0.22
0.47
0.47
1.0
1.0
2.14
4.7
1.2
2.60
5.7
0.57
最大
0.25
0.27
单位
注) 1.测量方法是基于日本工业标准JIS C 7030测量方法晶体管。
2. * :等级分类
秩
h
FE
Q
160至260
R
210 340
S
290 460
无秩
160 460
共同的特征图
P
T
T
a
250
总功耗P
T
( mW)的
200
150
100
50
0
0
40
80
120
160
环境温度T
a
(
°C
)
UNR5110的特性图
I
C
V
CE
T
a
=
25°C
I
B
= 1.0
mA
0.9毫安
100
0.8毫安
0.7毫安
0.6毫安
0.5毫安
80
0.4毫安
0.3毫安
60
0.2毫安
0.1毫安
20
V
CE ( SAT )
I
C
集电极 - 发射极饱和电压V
CE ( SAT )
(V)
100
I
C
/ I
B
=
10
h
FE
I
C
400
V
CE
=
–10 V
120
10
正向电流传输比H
FE
集电极电流I
C
(MA )
300
T
a
=
75°C
1
T
a
=
75°C
25°C
0.1
25°C
200
25°C
25°C
40
100
0
0
2
4
6
8
10
12
0.01
0.1
1
10
100
0
1
10
100
1
000
集电极 - 发射极电压V
CE
(V)
集电极电流I
C
(MA )
集电极电流I
C
(MA )
SJH00022BED
3
晶体管具有内置电阻
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
PNP硅外延平面晶体管
对于数字电路
2.1±0.1
单位:mm
s
特点
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
q
3
2
0.9±0.1
0-0.1
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
标记符号
UN5111
6A
UN5112
6B
UN5113
6C
UN5114
6D
UN5115
6E
UN5116
6F
UN5117
6H
UN5118
6I
UN5119
6K
UN5110
6L
UN511D
6M
UN511E
6N
UN511F
6O
UN511H
6P
UN511L
6Q
UN511M
EI
UN511N
EW
UN511T
EY
UN511V
FC
UN511Z
FE
(R
1
)
10k
22k
47k
10k
10k
4.7k
22k
0.51
1k
47k
47k
47k
4.7k
2.2k
4.7k
2.2k
4.7k
22k
2.2k
4.7k
(R
2
)
10k
22k
47k
47k
—
—
—
5.1k
10k
—
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
0.7±0.1
0.2±0.1
1 :基本
2 :发射器
3 :收藏家
EIAJ : SC- 70
S-迷你型包装
内部连接
R1
C
B
R2
E
s
绝对最大额定值
参数
集电极 - 基极电压
集电极到发射极电压
集电极电流
总功耗
结温
储存温度
符号
V
CBO
V
首席执行官
I
C
P
T
T
j
T
英镑
(Ta=25C)
评级
–50
–50
–100
150
150
-55到+150
单位
V
V
mA
mW
C
C
0.15
-0.05
+0.1
s
电阻产品型号
0.2
0.3
-0
q
成本可以通过设备的小型化降低和
减少零件的数量。
S-迷你型封装,可通过带自动插入
包装和杂志的包装。
+0.1
1
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
s
电气特性
参数
收藏家Cuto FF电流
UN5111
UN5112/5114/511E/511D/511M/511N/511T
UN5113
辐射源
截止
当前
UN5115/5116/5117/5110
UN511F/511H
UN5119
UN5118/511L/511V
UN511Z
集电极 - 基极电压
UN511N/511T/511V/511Z
集电极到发射极电压
UN511N/511T
UN5111
UN5112/511E
UN5113/5114/511M
前锋
当前
转让
比
UN5115*/5116*/5117*/5110*
UN511F/511D/5119/511H
UN5118/511L
UN511N/511T
UN511V
UN511Z
集电极到发射极饱和电压
UN511V
输出电压较高水平
输出电压低的水平
UN5113
UN511D
UN511E
跃迁频率
UN511Z
UN5111/5114/5115
UN5112/5117/511T
UN5113/5110/511D/511E
输入
电阻
tance
UN5116/511F/511L/511N/511Z
UN5118
UN5119
UN511H/511M/511V
(Ta=25C)
符号
I
CBO
I
首席执行官
条件
V
CB
= -50V ,我
E
= 0
V
CE
= -50V ,我
B
= 0
民
典型值
最大
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= -6V ,我
C
= 0
– 0.01
–1.0
–1.5
–2.0
– 0.4
V
CBO
V
首席执行官
I
C
= -10μA ,我
E
= 0
I
C
= -2mA ,我
B
= 0
–50
–50
–50
–50
35
60
80
160
h
FE
V
CE
= -10V ,我
C
= -5mA
30
20
80
6
60
V
CE ( SAT )
V
OH
I
C
= -10mA ,我
B
= - 0.3毫安
I
C
= -10mA ,我
B
= -1.5mA
V
CC
= –5V, V
B
= - 0.5V ,R
L
= 1k
V
CC
= –5V, V
B
= -2.5V ,R
L
= 1k
V
OL
V
CC
= –5V, V
B
= -3.5V ,R
L
= 1k
V
CC
= –5V, V
B
= ± 10V ,R
L
= 1k
V
CC
= –5V, V
B
= -6V ,R
L
= 1k
f
T
V
CB
= -10V ,我
E
= 1mA时, F = 200MHz的
V
CB
= -10V ,我
E
= 1mA时, F = 200MHz的
80
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
k
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
兆赫
V
400
20
200
– 0.25
– 0.25
V
V
460
V
mA
单位
A
A
V
* h
FE
等级分类( UN5115 / 5116 /五千一百十分之五千一百一十七)
秩
h
FE
Q
160至260
R
210 340
S
290 460
2
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
s
电气特性(续)
参数
UN5111/5112/5113/511L
UN5114
UN5118/5119
UN511D
电阻
tance
比
UN511E
UN511F/511T
UN511H
UN511M
UN511N
UN511V
UN511Z
R
1
/R
2
符号
(Ta=25C)
条件
民
0.8
0.17
0.08
典型值
1.0
0.21
0.1
4.7
2.14
0.47
0.17
0.22
0.047
0.1
1.0
0.21
0.27
最大
1.2
0.25
0.12
单位
3
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
共同的特征图
P
T
- TA
240
总功耗P
T
( mW)的
200
160
120
80
40
0
0
40
80
120
160
环境温度Ta (C )
UN5111的特性图
I
C
— V
CE
–160
–140
I
B
=–1.0mA
Ta=25C
–100
V
CE ( SAT )
— I
C
集电极到发射极饱和电压V
CE ( SAT )
(V)
I
C
/I
B
=10
160
V
CE
= –10V
h
FE
— I
C
Ta=75C
–30
–10
–3
–1
–0.3
–0.1
–25C
–0.03
–0.01
–0.1 –0.3
Ta=75C
集电极电流I
C
(MA )
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
正向电流传输比H
FE
25C
120
–25C
80
25C
40
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
集电极到发射极电压V
CE
(V)
集电极电流I
C
(MA )
集电极电流I
C
(MA )
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25C
V
IN
— I
O
V
O
=–5V
Ta=25C
–100
–30
V
O
= –0.2V
Ta=25C
–10000
–3000
集电极输出电容C
ob
(PF )
5
输出电流I
O
(
A
)
4
输入电压V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
集电极 - 基极电压
V
CB
(V)
输入电压V
IN
(V)
输出电流I
O
(MA )
4
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
UN5112的特性图
I
C
— V
CE
–160
–140
Ta=25C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–60
–40
–20
0
0
–2
–4
–6
–8
–10
–12
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
V
CE ( SAT )
— I
C
集电极到发射极饱和电压V
CE ( SAT )
(V)
I
C
/I
B
=10
h
FE
— I
C
400
V
CE
= –10V
–30
–10
–3
–1
–0.3
–0.1
–25C
–0.03
–0.01
–0.1 –0.3
正向电流传输比H
FE
集电极电流I
C
(MA )
–120
–100
300
Ta=75C
200
25C
–25C
100
25C
Ta=75C
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
集电极到发射极电压V
CE
(V)
集电极电流I
C
(MA )
集电极电流I
C
(MA )
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25C
–10000
–3000
V
O
=–5V
Ta=25C
V
IN
— I
O
–100
–30
V
O
=–0.2V
Ta=25C
集电极输出电容C
ob
(PF )
5
输出电流I
O
(
A
)
4
输入电压V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
集电极 - 基极电压
V
CB
(V)
输入电压V
IN
(V)
输出电流I
O
(MA )
UN5113的特性图
I
C
— V
CE
–160
I
B
=–1.0mA
–140
V
CE ( SAT )
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
= –10V
Ta=25C
集电极到发射极饱和电压V
CE ( SAT )
(V)
集电极电流I
C
(MA )
–120
–100
–80
–60
–40
–20
0
0
–2
–4
–6
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–30
–10
–3
–1
–0.3
–0.1
–25C
–0.03
–0.01
–0.1 –0.3
Ta=75C
正向电流传输比H
FE
300
Ta=75C
25C
200
–25C
–0.4mA
–0.3mA
–0.2mA
25C
100
–0.1mA
–8
–10
–12
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
集电极到发射极电压V
CE
(V)
集电极电流I
C
(MA )
集电极电流I
C
(MA )
5
晶体管具有内置电阻
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
511D/511E/511F/511H/511L/511M/511N/511T/511V/511Z
PNP硅外延平面晶体管
对于数字电路
2.1±0.1
单位:mm
s
特点
0.65
0.425
1.25±0.1
0.425
1
2.0±0.2
1.3±0.1
0.65
q
3
2
0.9±0.1
0-0.1
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
q
标记符号
UN5111
6A
UN5112
6B
UN5113
6C
UN5114
6D
UN5115
6E
UN5116
6F
UN5117
6H
UN5118
6I
UN5119
6K
UN5110
6L
UN511D
6M
UN511E
6N
UN511F
6O
UN511H
6P
UN511L
6Q
UN511M
EI
UN511N
EW
UN511T
EY
UN511V
FC
UN511Z
FE
(R
1
)
10k
22k
47k
10k
10k
4.7k
22k
0.51
1k
47k
47k
47k
4.7k
2.2k
4.7k
2.2k
4.7k
22k
2.2k
4.7k
(R
2
)
10k
22k
47k
47k
—
—
—
5.1k
10k
—
10k
22k
10k
10k
4.7k
47k
47k
47k
2.2k
22k
0.7±0.1
0.2±0.1
1 :基本
2 :发射器
3 :收藏家
EIAJ : SC- 70
S-迷你型包装
内部连接
R1
C
B
R2
E
s
绝对最大额定值
参数
集电极 - 基极电压
集电极到发射极电压
集电极电流
总功耗
结温
储存温度
符号
V
CBO
V
首席执行官
I
C
P
T
T
j
T
英镑
(Ta=25C)
评级
–50
–50
–100
150
150
-55到+150
单位
V
V
mA
mW
C
C
0.15
-0.05
+0.1
s
电阻产品型号
0.2
0.3
-0
q
成本可以通过设备的小型化降低和
减少零件的数量。
S-迷你型封装,可通过带自动插入
包装和杂志的包装。
+0.1
1
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
s
电气特性
参数
收藏家Cuto FF电流
UN5111
UN5112/5114/511E/511D/511M/511N/511T
UN5113
辐射源
截止
当前
UN5115/5116/5117/5110
UN511F/511H
UN5119
UN5118/511L/511V
UN511Z
集电极 - 基极电压
UN511N/511T/511V/511Z
集电极到发射极电压
UN511N/511T
UN5111
UN5112/511E
UN5113/5114/511M
前锋
当前
转让
比
UN5115*/5116*/5117*/5110*
UN511F/511D/5119/511H
UN5118/511L
UN511N/511T
UN511V
UN511Z
集电极到发射极饱和电压
UN511V
输出电压较高水平
输出电压低的水平
UN5113
UN511D
UN511E
跃迁频率
UN511Z
UN5111/5114/5115
UN5112/5117/511T
UN5113/5110/511D/511E
输入
电阻
tance
UN5116/511F/511L/511N/511Z
UN5118
UN5119
UN511H/511M/511V
(Ta=25C)
符号
I
CBO
I
首席执行官
条件
V
CB
= -50V ,我
E
= 0
V
CE
= -50V ,我
B
= 0
民
典型值
最大
– 0.1
– 0.5
– 0.5
– 0.2
– 0.1
I
EBO
V
EB
= -6V ,我
C
= 0
– 0.01
–1.0
–1.5
–2.0
– 0.4
V
CBO
V
首席执行官
I
C
= -10μA ,我
E
= 0
I
C
= -2mA ,我
B
= 0
–50
–50
–50
–50
35
60
80
160
h
FE
V
CE
= -10V ,我
C
= -5mA
30
20
80
6
60
V
CE ( SAT )
V
OH
I
C
= -10mA ,我
B
= - 0.3毫安
I
C
= -10mA ,我
B
= -1.5mA
V
CC
= –5V, V
B
= - 0.5V ,R
L
= 1k
V
CC
= –5V, V
B
= -2.5V ,R
L
= 1k
V
OL
V
CC
= –5V, V
B
= -3.5V ,R
L
= 1k
V
CC
= –5V, V
B
= ± 10V ,R
L
= 1k
V
CC
= –5V, V
B
= -6V ,R
L
= 1k
f
T
V
CB
= -10V ,我
E
= 1mA时, F = 200MHz的
V
CB
= -10V ,我
E
= 1mA时, F = 200MHz的
80
150
10
22
47
R
1
(–30%)
4.7
0.51
1
2.2
(+30%)
k
–4.9
– 0.2
– 0.2
– 0.2
– 0.2
兆赫
V
400
20
200
– 0.25
– 0.25
V
V
460
V
mA
单位
A
A
V
* h
FE
等级分类( UN5115 / 5116 /五千一百十分之五千一百一十七)
秩
h
FE
Q
160至260
R
210 340
S
290 460
2
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
s
电气特性(续)
参数
UN5111/5112/5113/511L
UN5114
UN5118/5119
UN511D
电阻
tance
比
UN511E
UN511F/511T
UN511H
UN511M
UN511N
UN511V
UN511Z
R
1
/R
2
符号
(Ta=25C)
条件
民
0.8
0.17
0.08
典型值
1.0
0.21
0.1
4.7
2.14
0.47
0.17
0.22
0.047
0.1
1.0
0.21
0.27
最大
1.2
0.25
0.12
单位
3
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
共同的特征图
P
T
- TA
240
总功耗P
T
( mW)的
200
160
120
80
40
0
0
40
80
120
160
环境温度Ta (C )
UN5111的特性图
I
C
— V
CE
–160
–140
I
B
=–1.0mA
Ta=25C
–100
V
CE ( SAT )
— I
C
集电极到发射极饱和电压V
CE ( SAT )
(V)
I
C
/I
B
=10
160
V
CE
= –10V
h
FE
— I
C
Ta=75C
–30
–10
–3
–1
–0.3
–0.1
–25C
–0.03
–0.01
–0.1 –0.3
Ta=75C
集电极电流I
C
(MA )
–0.9mA
–120
–100
–80
–60
–0.3mA
–40
–0.2mA
–20
–0.1mA
0
0
–2
–4
–6
–8
–10
–12
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–0.4mA
正向电流传输比H
FE
25C
120
–25C
80
25C
40
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
集电极到发射极电压V
CE
(V)
集电极电流I
C
(MA )
集电极电流I
C
(MA )
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25C
V
IN
— I
O
V
O
=–5V
Ta=25C
–100
–30
V
O
= –0.2V
Ta=25C
–10000
–3000
集电极输出电容C
ob
(PF )
5
输出电流I
O
(
A
)
4
输入电压V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
集电极 - 基极电压
V
CB
(V)
输入电压V
IN
(V)
输出电流I
O
(MA )
4
UN5111/5112/5113/5114/5115/5116/5117/5118/5119/5110/
晶体管具有内置电阻511D / 511E / 511F / 511H / 511L / 511M / 511N / 511T / 511V / 511Z
UN5112的特性图
I
C
— V
CE
–160
–140
Ta=25C
I
B
=–1.0mA
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–80
–60
–40
–20
0
0
–2
–4
–6
–8
–10
–12
–0.4mA
–0.3mA
–0.2mA
–0.1mA
–100
V
CE ( SAT )
— I
C
集电极到发射极饱和电压V
CE ( SAT )
(V)
I
C
/I
B
=10
h
FE
— I
C
400
V
CE
= –10V
–30
–10
–3
–1
–0.3
–0.1
–25C
–0.03
–0.01
–0.1 –0.3
正向电流传输比H
FE
集电极电流I
C
(MA )
–120
–100
300
Ta=75C
200
25C
–25C
100
25C
Ta=75C
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
集电极到发射极电压V
CE
(V)
集电极电流I
C
(MA )
集电极电流I
C
(MA )
C
ob
— V
CB
6
I
O
— V
IN
f=1MHz
I
E
=0
Ta=25C
–10000
–3000
V
O
=–5V
Ta=25C
V
IN
— I
O
–100
–30
V
O
=–0.2V
Ta=25C
集电极输出电容C
ob
(PF )
5
输出电流I
O
(
A
)
4
输入电压V
IN
(V)
–1000
–300
–100
–30
–10
–3
–10
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1 –0.3
3
2
1
0
–0.1 –0.3
–1
–3
–10
–30
–100
–1
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
–1
–3
–10
–30
–100
集电极 - 基极电压
V
CB
(V)
输入电压V
IN
(V)
输出电流I
O
(MA )
UN5113的特性图
I
C
— V
CE
–160
I
B
=–1.0mA
–140
V
CE ( SAT )
— I
C
–100
h
FE
— I
C
I
C
/I
B
=10
400
V
CE
= –10V
Ta=25C
集电极到发射极饱和电压V
CE ( SAT )
(V)
集电极电流I
C
(MA )
–120
–100
–80
–60
–40
–20
0
0
–2
–4
–6
–0.9mA
–0.8mA
–0.7mA
–0.6mA
–0.5mA
–30
–10
–3
–1
–0.3
–0.1
–25C
–0.03
–0.01
–0.1 –0.3
Ta=75C
正向电流传输比H
FE
300
Ta=75C
25C
200
–25C
–0.4mA
–0.3mA
–0.2mA
25C
100
–0.1mA
–8
–10
–12
–1
–3
–10
–30
–100
0
–1
–3
–10
–30
–100 –300 –1000
集电极到发射极电压V
CE
(V)
集电极电流I
C
(MA )
集电极电流I
C
(MA )
5