规格信息：
制造商:Infineon
产品种类:IGBT 晶体管
RoHS:是
技术:Si
封装 / 箱体:TO-247-3
安装风格:Through Hole
配置:Single
集电极—发射极最大电压 VCEO:600 V
集电极—射极饱和电压:1.95 V
栅极/发射极最大电压:20 V
在25 C的连续集电极电流:60 A
Pd-功率耗散:187 W
最小工作温度:- 40 C
最大工作温度:+ 175 C
系列:HighSpeed 3
封装:Tube
高度:20.7 mm
长度:15.87 mm
宽度:5.31 mm
商标:Infineon Technologies
栅极—射极漏泄电流:100 nA
产品类型:IGBT Transistors
工厂包装数量:240
子类别:IGBTs
商标名:TRENCHSTOP
零件号别名:IKW30N60H3FKSA1 IKW3N6H3XK SP000703042
单位重量:6.500 g
IKW30N60H3,全新原装当天发货或门市自取，量大价优，电子元器件BOM表一站式配单配套,稳定供应,因产品过多原因我们未对一.一产品进行参数描述，如需了解更多产品信息和价格欢迎咨询和购买请联系我们的工作人员.
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