FCPF11N60F
产品属性
属性值
制造商:
onsemi
产品种类:
MOSFET
RoHS:
详细信息
技术:
Si
安装风格:
Through Hole
封装 / 箱体:
TO-220-3
晶体管极性:
N-Channel
通道数量:
1 Channel
Vds-漏源极击穿电压:
600 V
Id-连续漏极电流:
11 A
Rds On-漏源导通电阻:
380 mOhms
Vgs - 栅极-源极电压:
- 30 V, + 30 V
Vgs th-栅源极阈值电压:
3 V
Qg-栅极电荷:
52 nC
最小工作温度:
- 55 C
最大工作温度:
+ 150 C
Pd-功率耗散:
125 W
通道模式:
Enhancement
商标名:
SuperFET FRFET
封装:
Tube
商标:
onsemi / Fairchild
配置:
Single
下降时间:
56 ns
正向跨导 - 最小值:
9.7 S
高度:
16.07 mm
长度:
10.36 mm
产品类型:
MOSFET
上升时间:
98 ns
系列:
FCPF11N60F
工厂包装数量:
1000
子类别:
MOSFETs
晶体管类型:
1 N-Channel
类型:
N-Channel MOSFET
典型关闭延迟时间:
119 ns
典型接通延迟时间:
34 ns
宽度:
4.9 mm
单位重量:
2 g
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