AOD4130-MS TO-252 MSKSEMI原厂现货,场效应管30A60V，深圳现货。
Description
The uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 60V ID =30 A
RDS(ON) < 30mΩ @ VGS=10V
Application
Battery protection
Load switch
Uninterruptible power supply
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 30A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 15A
ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5.6A
ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4.5A
IDM Pulsed Drain Current2 46 A
EAS Single Pulse Avalanche Energy3 25.5 mJ
IAS Avalanche Current 22.6 A
描述
采用先进的沟槽技术，提供出色的RDS（ON）、低栅极电荷和低至4.5V的栅极电压运行。该装置适用于电池保护或其他开关应用。
一般特征
VDS=60V ID=30A
VGS=10V时RDS（开启）<30mΩ
应用
电池保护
负荷开关
不间断电源
VDS漏源极电压60V
VGS栅极源电压±20 V
ID@TC=25℃连续漏电流，10V1 30A时的VGS
ID@TC=100℃连续漏电流，10V1 15A时的VGS
ID@TA=25℃连续漏电流，VGS@10V1 5.6A
ID@TA=70℃连续漏电流，VGS@10V1 4.5A
IDM脉冲漏极电流2 46 A
EAS单脉冲雪崩能量3 25.5 mJ
IAS雪崩电流22.6A
