MS30N06 TO-252 MSKSEMI代理厂家，30A60V场效应管，深圳现货。
Description
The MS30N06 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The MS30N06 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved.
BVDSS: 60V
RDSON:30MR
ID:30A
VDS Drain-Source Voltage 60V
VGS Gate-Source Voltage ±20V
ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 30A
ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 23A
ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 5A
ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 4A
IDM Pulsed Drain Current2 40A
EAS Single Pulse Avalanche Energy 22 mJ
IAS Avalanche Current 21A
PD@TC=25℃ Total Power Dissipation 31.3W
PD@TA=25℃ Total Power Dissipation 2W
描述
MS30N06是高单元密度沟槽式N-ch MOSFET，为大多数同步降压变换器应用提供出色的RDSON和栅极电荷。MS30N06符合RoHS和绿色产品要求，100%EAS保证，全功能可靠性得到批准。
BVDSS:60V
RDSON:30MR
ID：30A
VDS漏源极电压60V
VGS栅极源电压±20V
ID@TC=25℃连续漏电流，10V1 30A时的VGS
ID@TC=100℃连续漏电流，10V1 23A时VGS
ID@TA=25℃连续漏电流，VGS@10V1 5A
ID@TA=70℃连续漏电流，10V1 4A时的VGS
IDM脉冲漏极电流2 40A
EAS单脉冲雪崩能量22MJ
雪崩电流21A
PD@TC=25℃总功耗31.3W
PD@TA=25℃总功耗2W
