封装/引脚 VSONP (DNH) | 8
描述 60V、N 沟道 NexFET MOSFET、单路 SON3x3、9.9mΩ
漏源级电压 60
配置 Single
Rds(on) max at VGS=4.5 V (mOhms) 15.6
Rds(on) max at VGS=10 V (mOhms) 9.9
脉冲漏极电流(A) 156
栅极电荷典型值(nC) 11.1
GD充电电量(nC) 1.7
栅极和源极间电压(V) 20
开启电压typ (V) 2
ID, silicon limited at Tc=25degC (A) 60
ID, package limited (A) 35
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