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IPA65R650CEXKSA1

发布时间:2021/10/12 10:40:00 访问次数:114

产品属性 属性值 搜索类似
制造商: Infineon
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: Through Hole
封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 650 V
Id-连续漏极电流: 10.1 A
Rds On-漏源导通电阻: 650 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Vgs th-栅源极阈值电压: 3 V
Qg-栅极电荷: 23 nC
最小工作温度: - 40 C
最大工作温度: + 150 C
Pd-功率耗散: 28 W
通道模式: Enhancement
商标名: CoolMOS
封装: Tube
商标: Infineon Technologies
配置: Single
下降时间: 11 ns
高度: 16.15 mm
长度: 10.65 mm
产品类型: MOSFET
上升时间: 8 ns
系列: CoolMOS CE
工厂包装数量: 50
子类别: MOSFETs
晶体管类型: 1 N-Channel
典型关闭延迟时间: 64 ns
典型接通延迟时间: 10 ns
宽度: 4.85 mm
零件号别名: IPA65R650CE SP001295804
单位重量: 2 g

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