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制造商: Infineon
产品种类: MOSFET
RoHS: 详细信息
技术: Si
安装风格: SMD/SMT
封装 / 箱体: TO-252-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 100 V
Id-连续漏极电流: 15 A
Rds On-漏源导通电阻: 115 mOhms
Vgs - 栅极-源极电压: - 20 V, + 20 V
Vgs th-栅源极阈值电压: 1.8 V
Qg-栅极电荷: 29.3 nC
小工作温度: - 55 C
大工作温度: + 175 C
Pd-功率耗散: 52 W
通道模式: Enhancement
封装: Reel
封装: Cut Tape
封装: MouseReel
商标: Infineon / IR
配置: Single
下降时间: 25 ns
高度: 2.3 mm
长度: 6.5 mm
产品类型: MOSFET
上升时间: 27 ns
工厂包装数量: 2000
子类别: MOSFETs
晶体管类型: 1 N-Channel
类型: HEXFET Power MOSFET
典型关闭延迟时间: 37 ns
典型接通延迟时间: 6.4 ns
宽度: 6.22 mm
零件号别名: IRFR3910TRPBF SP001560674
单位重量: 330 mg
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