制造商: Infineon
封装: Tube
商标: Infineon / IR
配置: Single
下降时间: 31 ns
正向跨导 - 最小值: 49 S
高度: 15.65 mm
长度: 10 mm
产品类型: MOSFET
上升时间: 20 ns
产品种类: MOSFET
技术: Si
安装风格: Through Hole封装 / 箱体: TO-220-3
晶体管极性: N-Channel
通道数量: 1 Channel
Vds-漏源极击穿电压: 200 V
Id-连续漏极电流: 65 A
Rds On-漏源导通电阻: 24 mOhms
Vgs - 栅极-源极电压: - 30 V, + 30 V
Vgs th-栅源极阈值电压: 1.8 V
Qg-栅极电荷: 70 nC
最小工作温度: - 40 C
最大工作温度: + 175 C
Pd-功率耗散: 330 W
通道模式: Enhancement
子类别: MOSFETs
晶体管类型: 1 N-Channel典型关闭延迟时间: 21 ns
典型接通延迟时间: 33 ns
宽度: 4.4 mm
零件号别名: IRFB4227PBF SP001565892
单位重量: 2 g
IRFB4227PBF Infineon
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