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CMPA0527005F

发布时间:2020/6/28 10:46:00 访问次数:46发布企业:深圳市徕派德电子有限公司

a" data-cycle-center-horz="true" data-cycle-timeout="10000" cookie-tracking="ref_page_type=SP;ref_page_sub_type=PH;ref_page_id=%7BFC38319A-ED4A-4429-8B17-A780569B2C6F%7D;ref_page_event=Supplier%20Link;header_flag=link" style="margin-bottom:25px;font-family:Arial, Helvetica, sans-serif, dk;white-space:normal;"> Wolfspeed CMPA0527005F GaN HEMT MMIC Wolfspeed's MMIC uses GaN on SiC technology for radar power amps

Image of Cree Wolfspeed's CMPA0527005F GaN HEMT MMICWolfspeed, aCree Company, offers the CMPA0527005F packaged gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) with a matched input to 50Ω and an unmatched output. This device operates from a 50 V rail and can be used as a predriver from 0.5GHz to 2.7GHz. The transistor is available in a six-leaded flange package.

Features Operation: up to 2.7 GHz 50Ω matched input and unmatched output 8 W (CW) POUT(typ.) Small signal gain: 20 dB (typ.) Operation: 50 V Applications General-purpose broadband: 50 V Military communications (MilCom)

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