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NCS2333

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© Semiconductor Components Industries, LLC, 2015
September, 2015 − Rev. 4
1 Publication Order Number:
NCS333/D
NCS333, NCV333,
NCS2333, NCV2333,
NCS4333, NCV4333
<20 V Offset, 0.07 V/C,
Low Power, Zero-Drift
Operational Amplifier
The NCS333 family of high precision op amps feature very low
input offset voltage and near−zero drift over time and temperature.
These low quiescent current amplifiers have high impedance inputs
with a common−mode range 100 mV beyond the rails as well as
rail−to−rail output swing within 50 mV of the rails. These op amps
operate over a wide supply range from 1.8 V to 5.5 V. The NCS333
family exhibits outstanding CMRR without the crossover associated
with traditional complementary input stages. The NCS333, as well as
the dual version, NCS2333, and the quad version, NCS4333, come in a
variety of packages and pinouts. Automotive qualified options are
available under NCV prefix.
Features
• Low Offset Voltage: 10 V max for NCS333
• Zero Drift: 0.07 V/°C max
• Low Noise: 1.1 Vpp, 0.1 Hz to 10 Hz
• Quiescent Current per Channel: 17 A Typical at 3.3 V Supply
• Supply Voltage: 1.8 V to 5.5 V
• Rail−to−Rail Input and Output
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
• Temperature Measurements
• Transducer Applications
• Current Sensing
End Products
• Battery Powered Instruments
• Electronic Scales
• Medical Instrumentation
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
SOT23−5
SN SUFFIX
CASE 483
www.onsemi.com
1
5
SC70−5
SQ SUFFIX
CASE 419A
1
5
DFN−8
MN SUFFIX
CASE 506BW
MSOP−8
DM SUFFIX
CASE 846A−02
SOIC−8
D SUFFIX
CASE 751
SOIC−14
D SUFFIX
CASE 751A
See detailed ordering and shipping information on page 3 of
this data sheet.
ORDERING INFORMATION
See general marking information in the device marking
section on page 2 of this data sheet.
DEVICE MARKING INFORMATION
1
14
1
8
1
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
2
DEVICE MARKING INFORMATION
SOIC−14
CASE 751A
Quad Channel Configuration
NCS4333, NCV4333
NCS4333
AWLYWWG
1
14
33E = Specific Device Code (SOT23−5)
33H = Specific Device Code (SC70−5)
A = Assembly Location
Y = Year
W = Work Week
M = Date Code
G or  = Pb−Free Package
DFN8, 3x3, 0.65P
CASE 506BW
Micro8/MSOP8
CASE 846A−02
SOIC−8
CASE 751
N2333
ALYW

1
8
NCS
2333
ALYW

1
Dual Channel Configuration
NCS2333, NCV2333
TSOP−5/SOT23−5
CASE 483
SC70−5
CASE 419A
Single Channel Configuration
NCS333, NCV333
33HM

33EAYW

(Note: Microdot may be in either location)
2333
AYW

1
8
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
3
PIN CONNECTIONS
Single Channel Configuration
NCS333, NCV333
1
2
3 4
OUT 5
VSS
IN+ IN−
VDD 1
2
3 4
IN+ 5
VSS
IN− OUT
VDD
SOT23−5 / TSOP−5 SC70−5 / SC−88−5 / SOT−353−5
Dual Channel Configuration
NCS2333, NCV2333
Quad Channel Configuration
NCS4333, NCV4333
1
4
3
2
14
11
12
13
OUT 1
IN− 1
IN+ 1
VDD
OUT 4
IN− 4
IN+ 4
VSS
7
6
5
8
9
IN+ 2 10
IN− 2
OUT 2
IN+ 3
IN− 3
OUT 3
+

+


+ +

ORDERING INFORMATION
Configuration Automotive Device Package Shipping †
Single No NCS333SN2T1G SOT23−5 / TSOP−5 3000 / Tape & Reel
NCS333ASN2T1G*
(In Development)
3000 / Tape & Reel
NCS333SQ3T2G SC70−5 / SC−88−5 / SOT−353−5 3000 / Tape & Reel
NCS333ASQ3T2G*
(In Development)
3000 / Tape & Reel
Yes NCV333SN2T1G*
(In Development)
SOT23−5 / TSOP−5 3000 / Tape & Reel
Dual No NCS2333MNTXG*
(In Development)
DFN8 3000 / Tape & Reel
NCS2333DR2G*
(In Development)
SOIC−8 2500 / Tape & Reel
NCS2333DMR2G*
(In Development)
MICRO−8 4000 / Tape & Reel
Yes NCV2333DR2G*
(In Development)
SOIC−8 2500 / Tape & Reel
NCV2333DMR2G*
(In Development)
MICRO−8 4000 / Tape & Reel
Quad No NCS4333DR2G*
(In Development)
SOIC−14 2500 / Tape & Reel
Yes NCV4333DR2G*
(In Development)
SOIC−14 2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*Contact local sales office for more information
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
4
ABSOLUTE MAXIMUM RATINGS
Over operating free−air temperature, unless otherwise stated.
Parameter Rating Unit
Supply Voltage 7 V
INPUT AND OUTPUT PINS
Input Voltage (Note 1) (VSS) − 0.3 to (VDD) + 0.3 V
Input Current (Note 1) ±10 mA
Output Short Circuit Current (Note 2) Continuous
TEMPERATURE
Operating Temperature −40 to +125 °C
Storage Temperature −65 to +150 °C
Junction Temperature −65 to +150 °C
ESD RATINGS (Note 3)
Human Body Model (HBM) 4000 V
Machine Model (MM) 200 V
Charged Device Model (CDM) 2000 V
OTHER RATINGS
Latch−up Current (Note 4) 100 mA
MSL Level 1
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Input terminals are diode−clamped to the power−supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should
be current limited to 10 mA or less
2. Short−circuit to ground.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114)
ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115)
4. Latch−up Current tested per JEDEC standard: JESD78.
THERMAL INFORMATION (Note 5)
Parameter Symbol Package Value Unit
Thermal Resistance,
Junction to Ambient
JA SOT23−5/ TSOP5 235 °C/W
SC70−5 / SC−88−5 / SOT−353−5 250
Micro8/MSOP8 238
SOIC−8 190
DFN−8 70
SOIC−14 156
5. As mounted on an 80x80x1.5 mm FR4 PCB with 650 mm2 and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC JESD/EIA
51.1, 51.2, 51.3 test guidelines
RECOMMENDED OPERATING CONDITIONS
Parameter Symbol Range Unit
Supply Voltage (VDD − VSS) VS 1.8 to 5.5 V
Specified Operating Range NCS333 TA −40 to 105 °C
NCS333A, NCV333, NCx2333, NCx4333 −40 to 125
Input Common Mode Voltage Range VICMR VSS−0.1 to VDD+0.1 V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
5
ELECTRICAL CHARACTERISTICS: VS = 1.8 V to 5.5 V
At TA = +25°C, RL = 10 k connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design.
Parameter Symbol Conditions Min Typ Max Unit
INPUT CHARACTERISTICS
Offset Voltage VOS VS = +5 V NCx333 3.5 10 V
NCxx333 20
Offset Voltage Drift vs Temp VOS/T 0.03 0.07 V/°C
Offset Voltage Drift vs Supply VOS/VS VS = 1.8 V to 5.5 V 0.32 5 V/V
Input Bias Current IIB ±60 ±200 pA
400
Input Offset Current IOS ±50 ±400 pA
Common Mode Rejection Ratio CMRR VSS − 0.1 < VCM <
VDD + 0.1
VS = 1.8 V 111 dB
VS = 3.3 V 118
VS = 5.0 V 106 123
VS = 5.5 V 127
Input Resistance RIN Differential 180 G
Common Mode 90
Input Capacitance CIN NCx333 Differential 2.3 pF
Common Mode 4.6
NCx2333 Differential 4.1
Common Mode 7.9
OUTPUT CHARACTERISTICS
Open Loop Voltage Gain AVOL VSS + 100 mV < VCM < VDD − 100 mV 106 145 dB
Open Loop Output Impedance Zout−OL f = 350 kHz,
IO = 0 mA
NCx333 300 
f = 255 kHz,
IO = 0 mA
NCx2333 460
Output Voltage High VOH Referenced to VDD 8 50 mV
70
Output Voltage Low VOL Referenced to VSS 5 50 mV
70
Output Current Capability IO Sinking Current 25 mA
Sourcing Current 6
Capacitive Load Drive CL See Figure 13
NOISE PERFORMANCE
Voltage Noise Density eN fIN = 1 kHz 62 nV / √Hz
Voltage Noise eP−P fIN = 0.1 Hz to 10 Hz 1.1 VPP
fIN = 0.01 Hz to 1 Hz 0.5
Current Noise Density iN fIN = 10 Hz NCx333 350 fA / √Hz
NCxx333 200
DYNAMIC PERFORMANCE
Gain Bandwidth Product GBWP CL = 100 pF NCx333 350 kHz
NCxx333 255
Gain Margin AM CL = 100 pF 18 dB
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
6
ELECTRICAL CHARACTERISTICS: VS = 1.8 V to 5.5 V
At TA = +25°C, RL = 10 k connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted.
Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design.
Parameter Symbol Conditions Min Typ Max Unit
DYNAMIC PERFORMANCE
Phase Margin M CL = 100 pF 55 °
Slew Rate SR G = +1 0.1 V/s
POWER SUPPLY
Power Supply Rejection Ratio PSRR 106 130 dB
Turn−on Time tON VS = 5 V 20 s
Quiescent Current IQ No load, per
channel
1.8 V ≤ VS ≤ 3.3 V 17 25 A
27
3.3 V < VS ≤ 5.5 V 21 33
35
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
TYPICAL CHARACTERISTICS
Figure 1. Open Loop Gain and Phase Margin
vs. Frequency
Figure 2. CMRR vs. Frequency
FREQUENCY (Hz) FREQUENCY (Hz)
−20
0
20
60
80
120
10 100 1k 10k 100k 1M
0
10
30
50
70
80
100
120
Figure 3. PSRR vs. Frequency Figure 4. Output Voltage Swing vs. Output
Current
FREQUENCY (Hz) OUTPUT CURRENT (mA)
10 100 1k 10k 100k
0
20
40
60
80
100
120
0 1 2 4 5 6 7 9
−3
−2
−1
0
1
2
3
GAIN (dB)
CMRR (dB)
PSRR (dB)
OUTPUT SWING (V)
20
40
60
90
110
T = 25°C
T = 25°C
+PSRR
−PSRR
3 8 10
VS = 5.5 V, VOH T = 25°C
VS = 1.8 V, VOH
VS = 1.8 V, VOL
VS = 5.5 V, VOL
−40
40
100
Gain
Phase Margin
10 100 1k 10k 100k 1M
CL = 100 pF
RL = 10 k
T = 25°C
1M
15
30
45
75
90
120
0
60
105
PHASE MARGIN (°)
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
7
TYPICAL CHARACTERISTICS
Figure 5. Input Bias Current vs. Common
Mode Voltage
Figure 6. Input Bias Current vs. Temperature
COMMON MODE VOLTAGE (V) TEMPERATURE (°C)
−0.2 0.2 0.4 0.8 1.2 1.4 1.8
−200
−150
−100
−50
0
50
150
200
−40 −20 0 20 40 60 80 100
−200
−150
−100
−50
50
100
150
200
Figure 7. Quiescent Current vs. Temperature Figure 8. Large Signal Step Response
TEMPERATURE (°C) TIME (s)
−40 −20 0 20 40 60 80 100
0
5
10
15
20
25
30
−100 0 100 200 300 400
−4
−3
−2
−1
0
2
3
4
Figure 9. Small Signal Step Response Figure 10. Positive Overvoltage Recovery
TIME (s) TIME (50 s/div)
−10 0 10 20 30
−0.15
−0.10
−0.05
0
0.05
0.10
0.15
0.20
−3.0
−2.5
−2.0
−1.5
−1.0
−0.5
0.5
1.0
INPUT BIAS CURRENT (pA)
INPUT BIAS CURRENT (pA)
IQ (A)
INPUT (V)
INPUT AND OUTPUT (V)
INPUT (V)
VS = 1.8 V
VS = 3.3 V
VS = 5.0 V
VS = 5.5 V
1
Input
Output
VS = 5.0 V
AV = +1
RL = 10 k
−3
−2
−1
0
2
3
4
1
5
OUTPUT (V)
Input
Output
VS = 5.0 V
AV = −1
RL = 10 k
0
VS = 5.0 V
AV = −10
RL = 10 k
Input
Output
−1.0
−0.5
0
0.5
1.5
2.0
2.5
1.0
3.0
OUTPUT (V)
0 0.6 1.0 1.6 2.0
100
T = 25°C
VS = 1.8 V
IIB+
IIB−
T = 25°C
VS = 5 V
IIB+
0 IIB−
Per Channel
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
8
TYPICAL CHARACTERISTICS
Figure 11. Negative Overvoltage Recovery Figure 12. Setting Time to 0.1% vs.
Closed−Loop Gain
TIME (50 s/div) GAIN (V/V)
−1.0
−0.5
0
0.5
1.0
2.0
2.5
3.0
1 10 100
0
100
200
300
400
500
Figure 13. Small−Signal Overshoot vs. Load
Capacitance
Figure 14. 0.1 Hz to 10 Hz Noise
LOAD CAPACITANCE (pF) TIME (s)
10 100 1000
0
10
20
30
40
50
60
0 1 2 4 5 6 7 8
−1000
−750
−500
−250
0
500
750
1000
Figure 15. Voltage Noise Density vs.
Frequency
Figure 16. Current Noise Density vs.
Frequency
FREQUENCY (Hz) FREQUENCY (Hz)
1 10 100 1000 10,000
10
100
1000
1 10 100 1000 10,000
10
100
1000
INPUT (V)
SETTLING TIME (s)
OVERSHOOT (%)
VOLTAGE (nV)
VOLTAGE NOISE (nV/√Hz)
CURRENT NOISE (fA/√Hz)
VS = 5.0 V
AV = −10
RL = 10 k
Input
Output
T = 25°C
5
15
25
35
45
55
65
3 910
250
VCM = VS/2
RL = 10 k
T = 25°C
T = 25°C
T = 25°C
1.5
−3.0
−2.5
−2.0
−1.5
−0.5
0
0.5
−1.0
1.0
OUTPUT (V)
T = 25°C
RL = 10 k
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
9
APPLICATIONS INFORMATION
APPLICATION CIRCUITS
Low−Side Current Sensing
The goal of low−side current sensing is to detect
over−current conditions or as a method of feedback control.
A sense resistor is placed in series with the load to ground.
Typically, the value of the sense resistor is less than 100 m
to reduce power loss across the resistor. The op amp
amplifies the voltage drop across the sense resistor with a
gain set by external resistors R1, R2, R3, and R4 (where R1
= R2, R3 = R4). Precision resistors are required for high
accuracy, and the gain is set to utilize the full scale of the
ADC for the highest resolution.
+

Load
VDD
ADC
Microcontroller
control
RSENSE
R1
R2
R3
R4
VDD
VDD
VLOAD
Figure 17. Low−Side Current Sensing
Differential Amplifier for Bridged Circuits
Sensors to measure strain, pressure, and temperature are
often configured in a Wheatstone bridge circuit as shown in
Figure 18. In the measurement, the voltage change that is
produced is relatively small and needs to be amplified before
going into an ADC. Precision amplifiers are recommended
in these types of applications due to their high gain, low
noise, and low offset voltage.
Figure 18. Bridge Circuit Amplification
+

VDD
VDD
EMI Susceptibility and Input Filtering
Op amps have varying amounts of EMI susceptibility.
Semiconductor junctions can pick up and rectify EMI
signals, creating an EMI−induced voltage offset at the
output, adding another component to the total error. Input
pins are the most sensitive to EMI. The NCS333 op amp
family integrates low−pass filters to decrease sensitivity to
EMI.
General Layout Guidelines
To ensure optimum device performance, it is important to
follow good PCB design practices. Place 0.1 F decoupling
capacitors as close as possible to the supply pins. Keep traces
short, utilize a ground plane, choose surface−mount
components, and place components as close as possible to
the device pins. These techniques will reduce susceptibility
to electromagnetic interference (EMI). Thermoelectric
effects can create an additional temperature dependent
offset voltage at the input pins. To reduce these effects, use
metals with low thermoelectric−coefficients and prevent
temperature gradients from heat sources or cooling fans.
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
10
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419A−01 OBSOLETE. NEW STANDARD
419A−02.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
0.071 0.087 1.80 2.20
INCHES
B 0.045 0.053 1.15 1.35
C 0.031 0.043 0.80 1.10
D 0.004 0.012 0.10 0.30
G 0.026 BSC 0.65 BSC
H --- 0.004 --- 0.10
J 0.004 0.010 0.10 0.25
K 0.004 0.012 0.10 0.30
N 0.008 REF 0.20 REF
S 0.079 0.087 2.00 2.20
0.2 (0.008) M B M
1 2 3
5 4
A
G
S
D 5 PL
H
C
N
J
K
−B−
SC−88A (SC−70−5/SOT−353)
CASE 419A−02
ISSUE L
 mm
inchesSCALE 20:1 
0.65
0.025
0.65
0.025
0.50
0.0197
0.40
0.0157
1.9
0.0748
SOLDER FOOTPRINT
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
11
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
DIM MIN MAX
MILLIMETERS
A 3.00 BSC
B 1.50 BSC
C 0.90 1.10
D 0.25 0.50
G 0.95 BSC
H 0.01 0.10
J 0.10 0.26
K 0.20 0.60
M 0 10
S 2.50 3.00
1 2 3
5 4 S
A
G
B
D
H
C
J
 
0.7
0.028
1.0
0.039
 mm
SCALE 10:1 inches
0.95
0.037
2.4
0.094
1.9
0.074
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
0.20
5X
2X 0.10 T C A B
2X 0.20 T
NOTE 5
C SEATING
PLANE
0.05
K
M
DETAIL Z
DETAIL Z
TOP VIEW
SIDE VIEW
A
B
END VIEW
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
12
PACKAGE DIMENSIONS
DFN8, 3x3, 0.65P
CASE 506BW
ISSUE O
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM THE TERMINAL TIP.
4. COPLANARITY APPLIES TO THE EXPOSED
PAD AS WELL AS THE TERMINALS.
ééé
ééé
ééé
A
B
E
D
D2
E2
BOTTOM VIEW
b
e
8X
0.10 B
0.05
C A
C
8X K
NOTE 3
2X
0.10 C
PIN ONE
REFERENCE
TOP VIEW 2X 0.10 C
A
A1
(A3)
0.05 C
0.05 C
C SEATING
SIDE VIEW PLANE
8X L
1 4
8 5
DIM MIN MAX
MILLIMETERS
A 0.80 1.00
A1 0.00 0.05
A3 0.20 REF
b 0.25 0.35
D 3.00 BSC
D2 2.30 2.50
E 3.00 BSC
E2 1.55 1.75
e 0.65 BSC
K 0.20 −−−
L 0.35 0.45
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
ÇÇ
8X
0.62
2.50
1.75
0.40
1
0.65
PITCH
3.30
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
RECOMMENDED
8X
DIMENSIONS: MILLIMETERS
L1
DETAIL A
L
OPTIONAL
CONSTRUCTIONS
L
éé
éé
DETAIL B
EXPOSED Cu MOLD CMPD
OPTIONAL
CONSTRUCTIONS
DETAIL B
DETAIL A
L1 0.00 0.15
NOTE 4
e/2
SOLDERING FOOTPRINT*
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
13
PACKAGE DIMENSIONS
Micro8
CASE 846A−02
ISSUE J
0.08 (0.003) M T B S A S
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE
BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED
0.15 (0.006) PER SIDE.
4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION.
INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE.
5. 846A-01 OBSOLETE, NEW STANDARD 846A-02.
b
PIN 1 ID e
8 PL
0.038 (0.0015)
−T−
SEATING
PLANE
A
A1 c L
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
−− −− 1.10 −−
INCHES
A1 0.05 0.08 0.15 0.002
b 0.25 0.33 0.40 0.010
c 0.13 0.18 0.23 0.005
D 2.90 3.00 3.10 0.114
E 2.90 3.00 3.10 0.114
e 0.65 BSC
L 0.40 0.55 0.70 0.016
−− 0.043
0.003 0.006
0.013 0.016
0.007 0.009
0.118 0.122
0.118 0.122
0.026 BSC
0.021 0.028
NOM MAX
HE 4.75 4.90 5.05 0.187 0.193 0.199
HE
D
E
8X 0.48
0.65
PITCH
5.25
8X
0.80
DIMENSION: MILLIMETERS
RECOMMENDED
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
14
PACKAGE DIMENSIONS
SOIC−8 NB
CASE 751−07
ISSUE AK
SEATING
PLANE
1
4
8 5
N
J
X 45
K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION A AND B DO NOT INCLUDE
MOLD PROTRUSION.
4. MAXIMUM MOLD PROTRUSION 0.15 (0.006)
PER SIDE.
5. DIMENSION D DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE 0.127 (0.005) TOTAL
IN EXCESS OF THE D DIMENSION AT
MAXIMUM MATERIAL CONDITION.
6. 751−01 THRU 751−06 ARE OBSOLETE. NEW
STANDARD IS 751−07.
A
B S
H D
C
0.10 (0.004)
DIM
A
MIN MAX MIN MAX
INCHES
4.80 5.00 0.189 0.197
MILLIMETERS
B 3.80 4.00 0.150 0.157
C 1.35 1.75 0.053 0.069
D 0.33 0.51 0.013 0.020
G 1.27 BSC 0.050 BSC
H 0.10 0.25 0.004 0.010
J 0.19 0.25 0.007 0.010
K 0.40 1.27 0.016 0.050
M 0 8 0 8
N 0.25 0.50 0.010 0.020
S 5.80 6.20 0.228 0.244
−X−
−Y−
G
0.25 (0.010) M Y M
−Z−
0.25 (0.010) M Z Y S X S
M
   
1.52
0.060
7.0
0.275
0.6
0.024
1.270
0.050
4.0
0.155
 mm
inchesSCALE 6:1 
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333
www.onsemi.com
15
PACKAGE DIMENSIONS
SOIC−14 NB
CASE 751A−03
ISSUE K
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE PROTRUSION
SHALL BE 0.13 TOTAL IN EXCESS OF AT
MAXIMUM MATERIAL CONDITION.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD PROTRUSIONS.
5. MAXIMUM MOLD PROTRUSION 0.15 PER
SIDE.
H
14 8
1 7
0.25 M B M
C
h
X 45
SEATING
PLANE
A1
A
M

0.25 M C A S B S
13X b
B
A
E
D
e
DETAIL A
L
A3
DETAIL A
DIM MIN MAX MIN MAX
MILLIMETERS INCHES
D 8.55 8.75 0.337 0.344
E 3.80 4.00 0.150 0.157
A 1.35 1.75 0.054 0.068
b 0.35 0.49 0.014 0.019
L 0.40 1.25 0.016 0.049
e 1.27 BSC 0.050 BSC
A3 0.19 0.25 0.008 0.010
A1 0.10 0.25 0.004 0.010
M 0 7 0 7
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.019
   
6.50
14X
0.58
14X
1.18
1.27
DIMENSIONS: MILLIMETERS
1
PITCH
SOLDERING FOOTPRINT*
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed
at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets
and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended,
or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which
the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or
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