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CMA-545G1+

发布时间:2019/11/6 9:37:00 访问次数:37发布企业:深圳市创宝来科技有限公司


Low Noise, High IP3
Monolithic Amplifier
Page 1 of 5
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
The Big Deal
Product Overview
Mini-Circuits CMA-545G1+ is a E-PHEMT based Low Noise MMIC Amplifier operating from 0.4 to 2.2
GHz with a unique combination of low noise and high IP3 making this amplifier ideal for sensitive receiver
applications. This design operates on a single +5V supplyand is internally matched to 50 ohms. The
MMIC amplifier is bonded to a multilayer integrated LTCC substrate and then hermetically sealed under a
controlled nitrogen atmosphere with gold-plated covers and eutectic AuSn solder. These amplifiers have
been tested to MIL requirements for gross leak, fine leak, thermal shock, vibration, acceleration, mechanical
shock, and HTOL.
Key Features
CMA-545G1+
50Ω 0.4 to 2.2 GHz
• Ceramic, Hermetically Sealed, Nitrogen filled
• Low profile case, .045” high
• High Gain, 31.5 dB
• Low Noise Figure, 1.0 dB
• High IP3, 35-37 dBm
• Class 1B HBM ESD rating (500V)
CASE STYLE: DL1721
Feature Advantages
High Gain 25-32 dB
Incorporating multiple stages of amplification, the CMA-545G1+ provides high
gain reducing cost and PCB board space.
Ultra Low Noise: 0.8 dB NF at 0.9 GHz
Excellent Noise Figure, measured in a 50 Ohm environment – without any external
matching. When combined with high gain of this design, it suppresses
second stage NF contribution.
High IP3: +36 dBm IP3 at 0.9 GHz
Combining Low Noise and High IP3 makes this MMIC amplifier ideal for Low
Noise Receiver Front End (RFE) giving the user advantages at both ends of
the dynamic range: sensitivity & two-tone IM dynamic range
Output Power: +22 dBm at 0.9 GHz
The CMA-545G1+ maintains consistent output power capability over the full
operating temperature range making it ideal to be used in remote applications
such as LNB’s as the L Band driver stage
Internally Matched
No external matching elements required to achieve the advertized noise and
output power over the full band
Ceramic Hermetic Package Low Inductance, repeatable transitions, excellent reliability
Max Input Power +25 dBm
Ruggedized design operates up to input powers often seen at Receiver
inputs.
High Reliability
Low, small signal operating current of 160 mA nominal maintains junction
temperatures typically below 130°C at 85°C ground lead temperature
Low Noise, High IP3
Monolithic Amplifier
Page 2 of 5
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Product Features
• High Gain, 32 dB typ. at 0.9 GHz
• Ultra Low Noise Figure, 0.8 dB typ. at 0.9 GHz
• High IP3, 36 dBm typ. at 0.9 GHz
• High Pout, P1dB up to 22 dBm typ. at 0.9 GHz
• Single Positive Supply Voltage, 5V
• Class 1B HBM ESD rating (500V)
• Small size - 3mm x 3mm x 1.14mm
• Ceramic, hermetic, Nitrogen filled
• No external matching components required
Typical Applications
• Cellular
• ISM
• GSM
• WCDMA
• LTE
• GPS
CMA-545G1+
REV. B
M155058
CMA-545G1+
DJ/BT/CP
150713
0.4-2.2 GHz
CASE STYLE: DL1721
General Description
CMA-545G1+ is a high dynamic range, low noise, high IP3, high output power, monolithic amplifier.
Manufactured using E-PHEMT* technology enables it to work with a single positive supply voltage.
Unconditionally stable over the operating frequency. Terminal finish is Ni-Pd-Au and it has repeatable
performance from lot to lot due to fully automated, tightly controlled semiconductor and assembly processes.
+RoHS Compliant
The +Suffix identifies RoHS Compliance. See our web site
for RoHS Compliance methodologies and qualifications
Function Pad
Number Description (See Application Circuit, Fig. 2)
RF-IN 3 RF input pad (connected to RF-IN via C1)
RF-OUT & DC 6
RF output pad (connected to RF-OUT via blocking external cap C2, and Supply
voltage Vs via RF Choke L2)
BIAS 1 & 8 Bias pad 1 connects to Vs via L1 & pad 8 connects to Vs
GND bottom paddle 2&7 Connected to ground
NOT USED 4,5 No internal connection; recommend connecting to ground
*Enhancement mode Pseudomorphic High Electron Mobility Transistor.
3
1
2,4,5,7 paddle
RF-OUT
and DC
6
RF-IN
8
Bias
Bias
1 2 3 4
8 7 6 5
GND
Bias
RF
In
Bias Gnd NC
Gnd NC
RF
Out, DC
Top View
simplified schematic and pad description
Monolithic E-PHEMT MMIC Amplifier
Page 3 of 5
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
Electrical Specifications(1) at 25°C, Vd=5V, Zo=50Ω, (refer to characterization circuit)
Absolute Maximum Ratings(4)
Parameter Ratings
Operating Temperature(5) -55°C to 105°C
Storage Temperature -65°C to 125°C
Channel Temperature 150°C
DC Voltage 6V
Power Dissipation 1.35 W
Input Power 25 dBm
Parameter Condition (MHz) Min. Typ. Max. Units
Frequency Range 0.4 2.2 GHz
Noise Figure
0.4 1.0
dB
0.9 0.8
1.2 0.9
1.6 1.1
2.2 1.2
Gain
0.4 — 32.3 —
dB
0.9 — 31.8 —
1.2 28.1 31.6 34.5
1.6 — 30.0 —
2.2 — 25.4 —
Input Return Loss
0.4 15.3
dB
0.9 9.1
1.2 9.7
1.6 12.2
2.2 16.5
Output Return Loss
0.4 21.3
dB
0.9 17.1
1.2 14.7
1.6 14.2
2.2 21.5
Output IP3
0.4 35.7
dBm
0.9 36.1
1.2 36.5
1.6 37.2
2.2 37.3
Output Power @1 dB Compression(2)
0.4 — 22.1 —
dBm
0.9 — 22.8 —
1.2 20.0 23.3 —
1.6 — 23.7 —
2.2 — 23.4 —
DC Volts (Vd) 4.8 5.0 5.2 V
DC Current (Id) 158 186 mA
DC Current Variation Vs. Temperature(3) -0.156 mA/°C
DC Current Variation Vs. Voltage 0.027 mA/mV
Thermal Resistance(5) 48 °C/W
CMA-545G1+
(1) Measured on Mini-Circuits Characterization test board TB-758+. See Characterization Test Circuit (Fig. 1)
(2) Current increases at P1dB
(3) (Current at 85°C - Current at -45°C)/130
(4) Permanent damage may occur if any of these limits are exceeded.
These maximum ratings are not intended for continuous normal operation.
(5) Defined with reference to ground pad temperature.
DC Current Histogram
0
5
10
15
20
25
30
35
40
45
<120
120-125
125-130
130-135
135-140
140-145
145-150
150-155
155-160
160-165
165-170
170-175
175-180
180-185
185-190
>190
Current (mA)
Monolithic E-PHEMT MMIC Amplifier
Page 4 of 5
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
CMA-545G1+
Characterization Test Circuit
Recommended Application Circuit
Product Marking
MCL
CMA-
545G1+
DC YYWW
Suggested PCB Layout (PL-405)
ceramic body
model
Fig 1. Block Diagram of Test Circuit used for characterization. (DUT soldered on Mini-Circuits Characterization Test Board TB-758+) Gain, Output
power at 1dB compression (P1dB), Output IP3 (OIP3), Noise Figure are measured using Agilent’s N5242A PNA-X microwave network analyzer.
Conditions:
1. Gain: Pin=-25 dBm
2. Output IP3 (OIP3): Two tones, spaced 1 MHz apart, 0 dBm/tone at output.
3. Vs adjusted for 5V at device (Vd), compensating loss of bias tee.
Fig 2. Recommended Application Circuit
Component Description
DUT PMA-545G1+
C1, C2, C5, C6 100 pF
C3, C4 1μF
L1 36 nH
L2 47 nH
3
6
2,4,5,7
paddle
1
8
TB-758+
3
6
2,4,5,7
paddle
1
8
TB-758+
Monolithic E-PHEMT MMIC Amplifier
Page 5 of 5
Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled
to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Mini-Circuits®
www.minicircuits.com P.O. Box 350166, Brooklyn, NY 11235-0003 (718) 934-4500 sales@minicircuits.com
ESD Rating
Human Body Model (HBM): Class 1B (500 to <1000V) in accordance with ANSI/ESD STM 5.1 - 2001
Machine Model (MM): Class M1 (pass 35V) in accordance with ANSI/ESD STM5.2-1999
MSL Rating
Moisture Sensitivity: MSL1 (these parts are hermetic, air cavity and therefore, MSL ratings do not strictly
apply. For handling purpose, use MSL1)
CMA-545G1+
Additional Detailed Technical Information
additional information is available on our dash board. To access this information click here
Performance Data
Data Table
Swept Graphs
S-Parameter (S2P Files) Data Set (.zip file)
Case Style DL1721
Ceramic package, exposed paddle, Terminla finish: NiPdAu
Tape & Reel F66-1
Standard quantities available on reel 7” reels with 20, 50, 100, 200, 500 or 1K, 2K devices.
Suggested Layout for PCB Design PL-405
Evaluation Board TB-758+
Environmental Ratings ENV-68
Additional Notes
A. Performance and quality attributes and conditions not expressly stated in this specification document are intended
to be excluded and do not form a part of this specification document.
B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s
applicable established test performance criteria and measurement instructions.
C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms
and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled to the rights and benefits
contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder,
please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp
Qualification Testing
Test Description Test Method/Process Results
1 Hermeticity (fine and gross leak) MIL-STD-202 Method 112, Cond. C & D Pass
2 Acceleration, 30Kg, Y1 Direction MIL-STD-883 Method 2001 Cond. E Pass
3 Vibration , 10-2000Hz sine, 20g, 3 axis MIL-STD-202 Method 204, Cond. D Pass
4 Mechanical shock MIL-STD-202 Method 213, Cond . A Pass
5 PIND 20G’s @130 Hz MIL-STD-750 Method 2052.2 Pass
6 Temp Cycle -55C/+125C, 1000 Cycles MIL-STD-202 Method 107 Pass
7 Autoclave, 121C, RH 100%, 15 Psig, 96 hrs JESD22-A102C Pass
8 HTOL, 1000hrs, 105C at rated Voltage condition MIL-STD-202 Method 108, Cond . D Pass
9 Bend Test JESD22-B113 Pass
10 Resistance to soldering heat, 3x reflow, 260C peak JESD22-B102 Pass
11 Drop Test JESD22-B111 Pass
12 Adhesion Strength Push Test>10 lb Pass
All Datasheets Cannot Be Modified Without Permission
Copyright © Each Manufacturing Company
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