rd30huf1是一个专门MOS FET型晶体管专为UHF RF功率放大器应用
特征：高功率增益：Pout>30W, Gp>10dB @Vdd=12.5V,f=520MHz高效率：55%typ 应用：对于输出的高功率放大器阶段UHF频带移动无线setsROHS柔性：rd30huf1-101是RoHS兼容产品.RoHS遵守指示后，由信“G”该地段标志
DESCRIPTION RD30HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>30W, Gp>14.7dB @Vdd=12.5V,f=175MHz High Efficiency: 60%typ. APPLICATION For output stage of high power amplifiers in VHF band Mobile radio sets.
