IRFU5305PBF 全国供应商、价格、PDF资料
IRFU5305PBF详细规格
- 类别:FET - 单
- 描述:MOSFET P-CH 55V 31A I-PAK
- 系列:HEXFET®
- 制造商:International Rectifier
- FET型:MOSFET P 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:55V
- 电流_连续漏极333Id4440a025000C:31A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:65 毫欧 @ 16A,10V
- Id时的Vgs333th444(最大):4V @ 250µA
- 闸电荷333Qg4440a0Vgs:63nC @ 10V
- 输入电容333Ciss4440a0Vds:1200pF @ 25V
- 功率_最大:110W
- 安装类型:通孔
- 封装/外壳:TO-251-3 长引线,IPak,TO-251AB
- 供应商设备封装:I-Pak
- 包装:管件
- FET - 单 Fairchild Semiconductor 8-SOIC(0.154",3.90mm 宽) MOSFET N-CH 30V 13A 8-SOIC
- 热 - 垫,片 t-Global Technology H48-6C SHEET 320X320X1MM W/ADH
- FET - 单 Infineon Technologies TO-247-3 MOSFET N-CH 650V 25A TO-247
- FET - 单 Vishay Siliconix TO-251-3 短引线,IPak,TO-251AA MOSFET N-CH 500V 2.4A I-PAK
- 固定式 Vishay Dale 1812(4532 公制) INDUCTOR WW 150UH 10% 1812
- 陶瓷 Murata Electronics North America 0201(0603 公制) CAP CER 4.6PF 25V NP0 0201
- FET - 单 Vishay Siliconix TO-251-3 短引线,IPak,TO-251AA MOSFET N-CH 500V 5A I-PAK
- FET - 单 Fairchild Semiconductor 8-SOIC(0.154",3.90mm 宽) MOSFET P-CH 30V 11A 8-SOIC
- 热 - 垫,片 t-Global Technology H48-6C SHEET 640X320X1MM
- 陶瓷 Murata Electronics North America 0201(0603 公制) CAP CER 4.8PF 25V NP0 0201
- 固定式 Vishay Dale 1812(4532 公制) INDUCTOR WW 180UH 5% 1812
- FET - 单 International Rectifier TO-251-3 长引线,IPak,TO-251AB MOSFET P-CH 55V 18A I-PAK
- FET - 单 Fairchild Optoelectronics Group 8-SOIC(0.154",3.90mm 宽) MOSFET P-CH 30V 8-SOIC
- FET - 单 Infineon Technologies TO-247-3 MOSFET N-CH 650V 31.2A TO247
- 热 - 垫,片 t-Global Technology H48-6C SHEET 640X320X2MM W/ADH