IPD096N08N3 G 全国供应商、价格、PDF资料
IPD096N08N3 G详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 80V 73A TO252-3
- 系列:OptiMOS™
- 制造商:Infineon Technologies
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:80V
- 电流_连续漏极333Id4440a025000C:73A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:9.6 毫欧 @ 46A,10V
- Id时的Vgs333th444(最大):3.5V @ 46µA
- 闸电荷333Qg4440a0Vgs:35nC @ 10V
- 输入电容333Ciss4440a0Vds:2410pF @ 40V
- 功率_最大:100W
- 安装类型:表面贴装
- 封装/外壳:TO-252-3,DPak(2 引线+接片),SC-63
- 供应商设备封装:PG-TO252-3
- 包装:带卷 (TR)
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps Texas Instruments 8-TSSOP(0.173",4.40mm 宽) IC OPAMP GP 700KHZ DUAL 8TSSOP
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 64KBIT 15NS 68PLCC
- FET - 单 Infineon Technologies TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 30V 50A TO-252
- PMIC - LED 驱动器 Texas Instruments 6-WDFN 裸露焊盘 IC LED DRVR WT/OLED BCKLGT 6-LLP
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 20-TSSOP(0.173",4.40mm 宽) IC CLK SYNTH TRPL PLL 20-TSSOP
- 线性 - 放大器 - 专用 Texas Instruments 16-SOIC(0.295",7.50mm 宽) IC COMP/REF/OPAMP DUAL 16SOIC
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SS 16384X18 10NS 64-TQFP
- 逻辑 - 比较器 IDT, Integrated Device Technology Inc 20-SSOP(0.154",3.90mm 宽) IC COMPARATOR IDENTITY 8B 20QSOP
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 64KBIT 15NS 68PLCC
- PMIC - LED 驱动器 Texas Instruments 6-WDFN 裸露焊盘 IC LED DRVR WT/OLED BCKLGT 6-LLP
- 未定义的系列 Texas Instruments * IC OP AMP DUAL HS R-R I/O 8-SOIC
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 20-SSOP(0.154",3.90mm 宽) IC SRL PROGR QUAD PLL CLK 20QSOP
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SS 16384X18 15NS 64STQFP
- 逻辑 - 栅极和逆变器 IDT, Integrated Device Technology Inc 20-SSOP(0.154",3.90mm 宽) IC INVERTER 8-INPUT 20QSOP
- Linear - Amplifiers - Instrumentation, OP Amps, Buffer Amps ON Semiconductor 8-SOIC(0.154",3.90mm 宽) IC OPAMP DUAL LOW POWER 8-SOIC