IGB50N60T详细规格
- 类别:IGBT - 单路
- 描述:IGBT 600V 100A 333W TO263-3
- 系列:TrenchStop™
- 制造商:Infineon Technologies
- IGBT类型:沟道
- 电压_集电极发射极击穿(最大):600V
- VgewwwwIc时的最大Vce(开):2V @ 15V,50A
- 电流_集电极333Ic444(最大):100A
- 功率_最大:333W
- 输入类型:标准
- 安装类型:表面贴装
- 封装/外壳:TO-263-3,D²Pak(2 引线+接片),TO-263AB
- 供应商设备封装:PG-TO263-3-2
- 包装:带卷 (TR)
- 陶瓷 Murata Electronics North America 0805(2012 公制) CAP CER 1UF 16V 5% X7R 0805
- IGBT - 单路 Infineon Technologies TO-263-3,D²Pak(2 引线+接片),TO-263AB IGBT 600V 20A 110W TO263-3
- 时钟/计时 - 时钟发生器,PLL,频率合成器 IDT, Integrated Device Technology Inc 8-TSSOP(0.173",4.40mm 宽) IC SYNTHESIZER LVPECL 8-TSSOP
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 72KBIT 20NS 68PLCC
- 适配器 Freescale Semiconductor SOCKET MINI GRID 196-BGA 1.MMM
- 陶瓷 Murata Electronics North America 0805(2012 公制) CAP CER 1UF 16V 10% X7R 0805
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 128-LQFP IC FIFO SYNC 512X36X2 128QFP
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SS 8192X18 20NS 64-STQFP
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 256KBIT 25NS 68PLCC
- 适配器 Freescale Semiconductor SOCKET MINI GRID 208-BGA
- 存储器 IDT, Integrated Device Technology Inc 68-LCC(J 形引线) IC SRAM 72KBIT 20NS 68PLCC
- 陶瓷 Murata Electronics North America 0805(2012 公制) CAP CER 1UF 16V 10% X7R 0805
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 120-LQFP IC FIFO SYNC 2048X36 120QFP
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SS 8192X18 10NS 64QFP
- 存储器 IDT, Integrated Device Technology Inc 80-LQFP IC SRAM 256KBIT 25NS 80TQFP