HUFA76404DK8T 全国供应商、价格、PDF资料
HUFA76404DK8T详细规格
- 类别:FET - 阵列
- 描述:MOSFET N-CH DUAL 62V 3.2A 8-SOIC
- 系列:-
- 制造商:Fairchild Semiconductor
- FET型:2 个 N 沟道(双)
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:62V
- 电流_连续漏极333Id4440a025000C:3.6A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:110 毫欧 @ 3.6A,10V
- Id时的Vgs333th444(最大):3V @ 250µA
- 闸电荷333Qg4440a0Vgs:4.9nC @ 5V
- 输入电容333Ciss4440a0Vds:250pF @ 25V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:8-SOIC(0.154",3.90mm 宽)
- 供应商设备封装:8-SOIC N
- 包装:带卷 (TR)
- 固定式 Vishay Dale 1812(4532 公制) INDUCTOR WW 82UH 5% 1812
- 芯片电阻 - 表面安装 Vishay Dale 1206(3216 公制) RES 1.80K OHM 1/4W 1% 1206 SMD
- Card Edge, Edgeboard Connectors Sullins Connector Solutions 4-SIP,GSIB-5S CONN EDGECARD 12POS .156 EXTEND
- FET - 单 Fairchild Semiconductor TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 150V 18A DPAK
- 陶瓷 Murata Electronics North America 1206(3216 公制) CAP CER 2.2UF 16V 10% X5R 1206
- Card Edge, Edgeboard Connectors Sullins Connector Solutions TO-243AA CONN EDGECARD 130PS DIP .100 SLD
- FET - 单 Fairchild Semiconductor TO-263-3,D²Pak(2 引线+接片),TO-263AB MOSFET N-CH 150V 43A D2PAK
- 芯片电阻 - 表面安装 Vishay Dale 1206(3216 公制) RES 1.80K OHM 1/4W 1% 1206 SMD
- 固定式 Vishay Dale 1812(4532 公制) INDUCTOR WW 220UH 10% 1812
- 陶瓷 Murata Electronics North America 1206(3216 公制) CAP CER 2.2UF 25V 10% X5R 1206
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET N-CH 60V 35A TO-220AB
- 固定式 Vishay Dale 1812(4532 公制) INDUCTOR WW 1.0UH 10% 1812
- 芯片电阻 - 表面安装 Vishay Dale 1206(3216 公制) RES 1.8K OHM 1/4W 5% 1206 SMD
- Card Edge, Edgeboard Connectors Sullins Connector Solutions 4-SIP,GSIB-5S CONN EDGECARD 12POS DIP .156 SLD
- FET - 单 Fairchild Semiconductor TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 60V 20A DPAK