FQP2N50详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 500V 2.1A TO-220
- 系列:QFET™
- 制造商:Fairchild Semiconductor
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:500V
- 电流_连续漏极333Id4440a025000C:2.1A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:5.3 欧姆 @ 1.05A,10V
- Id时的Vgs333th444(最大):5V @ 250µA
- 闸电荷333Qg4440a0Vgs:8nC @ 10V
- 输入电容333Ciss4440a0Vds:230pF @ 25V
- 功率_最大:55W
- 安装类型:通孔
- 封装/外壳:TO-220-3
- 供应商设备封装:TO-220
- 包装:管件
- RF配件 Laird Technologies IAS MOUNT MAGN 3/4" 58A UHFM
- 其它 Omron Electronics Inc-IA Div 2M 4COND 22AWG TPE ST MALE M12
- 热 - 垫,片 t-Global Technology 径向,圆盘 H48-2 SHEET 300X300X2MM
- RF配件 Laird Technologies IAS MOUNT MAGN 3/4" 58A RTNM
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET P-CH 60V 17A TO-220
- 热 - 垫,片 t-Global Technology 径向,圆盘 H48-2 SHEET 300X300X3MM W/ADH
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET N-CH 100V 19A TO-220
- 热 - 垫,片 t-Global Technology H48-2 SHEET 640X320X0.5MM W/ADH
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET P-CH 100V 22A TO-220
- 热 - 垫,片 t-Global Technology H48-6 SHEET 150X150X0.5MM W/ADH
- RF配件 Laird Technologies IAS MOUNT MAGN 3/4" TEFLEX BNCM
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET N-CH 900V 2.2A TO-220
- 热 - 垫,片 t-Global Technology THERMAL PAD H48-6 25X25X9MM
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET N-CH 900V 5.4A TO-220
- RF配件 Laird Technologies IAS MOUNT MAGN 3/4" 58A BNCM