FQD10N20CTM_F080的供应信息|PDF资料|求购FQD10N20CTM

FQD10N20CTM_F080详细规格: 类别：FET - 单; 描述：MOSFET N-CH 200V 7.8A DPAK; 系列：QFET™; 制造商：Fairchild Semiconductor; FET型：MOSFET N 通道，金属氧化物; FET特点：标准; 漏极至源极电压333Vdss444：200V; 电流_连续漏极333Id4440a025000C：7.8A; 开态Rds（最大）0a0IdwwwwVgs0a025000C：360 毫欧 @ 3.9A，10V; Id时的Vgs333th444（最大）：4V @ 250µA; 闸电荷333Qg4440a0Vgs：26nC @ 10V; 输入电容333Ciss4440a0Vds：510pF @ 25V; 功率_最大：50W; 安装类型：表面贴装; 封装/外壳：TO-252-3，DPak（2 引线+接片），SC-63; 供应商设备封装：D-Pak; 包装：带卷 (TR)

FQD10N20CTM_F080供应商

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