FDMC8200详细规格
- 类别:FET - 阵列
- 描述:MOSFET 2N-CH 30V 8A/12A POWER33
- 系列:PowerTrench®
- 制造商:Fairchild Semiconductor
- FET型:2 个 N 沟道(双)
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:30V
- 电流_连续漏极333Id4440a025000C:8A,12A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:20 毫欧 @ 6A,10V
- Id时的Vgs333th444(最大):3V @ 250µA
- 闸电荷333Qg4440a0Vgs:10nC @ 10V
- 输入电容333Ciss4440a0Vds:660pF @ 15V
- 功率_最大:700mW,900mW
- 安装类型:表面贴装
- 封装/外壳:8-PowerVDFN
- 供应商设备封装:8-Power33(3x3)
- 包装:剪切带 (CT)
FDMC8200详细规格
- 类别:FET - 阵列
- 描述:MOSFET 2N-CH 30V 8A/12A POWER33
- 系列:PowerTrench®
- 制造商:Fairchild Semiconductor
- FET型:2 个 N 沟道(双)
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:30V
- 电流_连续漏极333Id4440a025000C:8A,12A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:20 毫欧 @ 6A,10V
- Id时的Vgs333th444(最大):3V @ 250µA
- 闸电荷333Qg4440a0Vgs:10nC @ 10V
- 输入电容333Ciss4440a0Vds:660pF @ 15V
- 功率_最大:700mW,900mW
- 安装类型:表面贴装
- 封装/外壳:8-PowerVDFN
- 供应商设备封装:8-Power33(3x3)
- 包装:Digi-Reel®
FDMC8200详细规格
- 类别:FET - 阵列
- 描述:MOSFET 2N-CH 30V 8A/12A POWER33
- 系列:PowerTrench®
- 制造商:Fairchild Semiconductor
- FET型:2 个 N 沟道(双)
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:30V
- 电流_连续漏极333Id4440a025000C:8A,12A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:20 毫欧 @ 6A,10V
- Id时的Vgs333th444(最大):3V @ 250µA
- 闸电荷333Qg4440a0Vgs:10nC @ 10V
- 输入电容333Ciss4440a0Vds:660pF @ 15V
- 功率_最大:700mW,900mW
- 安装类型:表面贴装
- 封装/外壳:8-PowerVDFN
- 供应商设备封装:8-Power33(3x3)
- 包装:带卷 (TR)
FDMC8200S详细规格
- 类别:FET - 阵列
- 描述:MOSFET N-CH DUAL 30V 8MLP
- 系列:PowerTrench®
- 制造商:Fairchild Semiconductor
- FET型:2 个 N 沟道(双)
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:30V
- 电流_连续漏极333Id4440a025000C:6A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:20 毫欧 @ 6A,10V
- Id时的Vgs333th444(最大):3V @ 250µA
- 闸电荷333Qg4440a0Vgs:10nC @ 10V
- 输入电容333Ciss4440a0Vds:660pF @ 15V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:8-WDFN 裸露焊盘
- 供应商设备封装:8-MLP(3.3X3.3),Power33
- 包装:剪切带 (CT)
FDMC8200S详细规格
- 类别:FET - 阵列
- 描述:MOSFET N-CH DUAL 30V 8MLP
- 系列:PowerTrench®
- 制造商:Fairchild Semiconductor
- FET型:2 个 N 沟道(双)
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:30V
- 电流_连续漏极333Id4440a025000C:6A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:20 毫欧 @ 6A,10V
- Id时的Vgs333th444(最大):3V @ 250µA
- 闸电荷333Qg4440a0Vgs:10nC @ 10V
- 输入电容333Ciss4440a0Vds:660pF @ 15V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:8-WDFN 裸露焊盘
- 供应商设备封装:8-MLP(3.3X3.3),Power33
- 包装:Digi-Reel®
FDMC8200S详细规格
- 类别:FET - 阵列
- 描述:MOSFET N-CH DUAL 30V 8MLP
- 系列:PowerTrench®
- 制造商:Fairchild Semiconductor
- FET型:2 个 N 沟道(双)
- FET特点:逻辑电平门
- 漏极至源极电压333Vdss444:30V
- 电流_连续漏极333Id4440a025000C:6A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:20 毫欧 @ 6A,10V
- Id时的Vgs333th444(最大):3V @ 250µA
- 闸电荷333Qg4440a0Vgs:10nC @ 10V
- 输入电容333Ciss4440a0Vds:660pF @ 15V
- 功率_最大:2.5W
- 安装类型:表面贴装
- 封装/外壳:8-WDFN 裸露焊盘
- 供应商设备封装:8-MLP(3.3X3.3),Power33
- 包装:带卷 (TR)
- 二极管,整流器 - 阵列 Vishay General Semiconductor TO-263-3,D²Pak(2 引线+接片),TO-263AB DIODE 16A 400V 50NS DUAL
- 热缩管 3M 非标准 HEATSHRINK FP301 1" 100’ CLR
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 70POS .100 EYELET
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET N-CH 150V 45A TO-220
- FET - 单 Fairchild Semiconductor 8-PowerWDFN MOSFET N-CH 30V 8-MLP
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 16POS R/A .156 SLD
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 44POS R/A .100 SLD
- 热缩管 3M 非标准 HEATSHRINK FP301 1" 100’ GRN
- 二极管,整流器 - 阵列 Vishay General Semiconductor TO-263-3,D²Pak(2 引线+接片),TO-263AB DIODE 6A 150V 35NS DUAL TO263AB
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 16POS R/A .156 SLD
- FET - 单 Fairchild Semiconductor TO-220-3 MOSFET P-CH 60V 47A TO-220
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 44POS R/A .100 SLD
- 热缩管 3M 非标准 HEATSHRINK FP301 1" 5’ WHITE
- 二极管,整流器 - 阵列 Vishay General Semiconductor TO-220-3 隔离片 DIODE 16A 600V 50NS DUAL TO220-3
- FET - 单 Fairchild Semiconductor 8-PowerVDFN MOSFET N-CH 20V 16.5A POWER33