APTM100H45SCTG的供应信息|PDF资料|求购APTM100H45SCTG上51电子网

APTM100H45SCTG详细规格: 类别：FET; 描述：MOSFET 4N CH 1000V 18A SP4; 系列：POWER MOS 7®; 制造商：Microsemi Power Products Group; FET型：4 个 N 通道（H 桥）; FET特点：标准; 漏极至源极电压333Vdss444：1000V（1kV）; 电流_连续漏极333Id4440a025000C：18A; 开态Rds（最大）0a0IdwwwwVgs0a025000C：540 毫欧 @ 9A，10V; Id时的Vgs333th444（最大）：5V @ 2.5mA; 闸电荷333Qg4440a0Vgs：154nC @ 10V; 输入电容333Ciss4440a0Vds：4350pF @ 25V; 功率_最大：357W; 安装类型：底座安装; 封装/外壳：SP4; 供应商设备封装：SP4; 包装：散装

APTM100H45SCTG供应商

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