IPA60R190P6
Infineon Technologies AG
Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220FP, FULL PACK-3
参数名称 参数值
Source Content uid IPA60R190P6
是否Rohs认证 符合 符合
生命周期 Active
Objectid 1384824248
包装说明 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN代码 EAR99
风险等级 5.76
雪崩能效等级（Eas） 419 mJ
外壳连接 ISOLATED
配置 SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 600 V
最大漏极电流 (ID) 20.2 A
最大漏源导通电阻 0.19 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码 TO-220AB
JESD-30 代码 R-PSFM-T3
JESD-609代码 e3
元件数量 1
端子数量 3
工作模式 ENHANCEMENT MODE
最高工作温度 150 °C
最低工作温度 -55 °C
封装主体材料 PLASTIC/EPOXY
封装形状 RECTANGULAR
封装形式 FLANGE MOUNT
峰值回流温度（摄氏度） NOT SPECIFIED
极性/信道类型 N-CHANNEL
最大脉冲漏极电流 (IDM) 57 A
表面贴装 NO
端子面层 Tin (Sn)
端子形式 THROUGH-HOLE
端子位置 SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED
晶体管应用 SWITCHING
晶体管元件材料 SILICON
UT120N03L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 120A I(D), 30V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
高
对比 5N40L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
高
对比 UFZ44L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
高
对比 10N30G-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Active
高
对比 7N75L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 7A I(D), 750V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
高
对比 5N40G-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 5A I(D), 400V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN
Active
高
对比 4N50L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
高
对比 6N40L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
高
对比 12N50L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
6N50L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 6A I(D), 500V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Active
高
对比 12N90G-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 12A I(D), 900V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN
Active
高
对比 7N65KL-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Active
高
对比 8N40L-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 8A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Active
高
对比 9N70G-TA3-T
功率场效应晶体管
Unisonic Technologies Co Ltd
Power Field-Effect Transistor, 9A I(D), 700V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE, TO-220, 3 PIN
Active
高
对比 IPA50R199CP
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Not Recommended
高
对比 IPP50R199CPXKSA1
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Not Recommended
高
对比 IPA50R199CPXKSA1
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 17A I(D), 500V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, FULL PACK-3
Not Recommended
高
对比 BUK101-50GL127
外围驱动器
NXP Semiconductors
IC BUF OR INV BASED PRPHL DRVR, PSFM3, PLASTIC, TO-220AB, 3 PIN, Peripheral Driver
Obsolete
高
对比 BUK101-50GL
外围驱动器
NXP Semiconductors
IC 100 A BUF OR INV BASED PRPHL DRVR, PSFM3, PLASTIC, TO-220AB, 3 PIN, Peripheral Driver
Obsolete
BUK101-50GS
外围驱动器
NXP Semiconductors
IC 80 A BUF OR INV BASED PRPHL DRVR, PSFM3, PLASTIC, TO-220AB, 3 PIN, Peripheral Driver
Obsolete
高
对比 IRSF3011
外围驱动器
International Rectifier
Buffer/Inverter Based Peripheral Driver, 16A, PDIP3, TO-220, 3 PIN
Obsolete
高
对比 IRSF3031
外围驱动器
International Rectifier
Buffer/Inverter Based Peripheral Driver, PSFM3, TO-220, 3 PIN
Obsolete
高
对比 BUK100-50GS
外围驱动器
NXP Semiconductors
IC 40 A BUF OR INV BASED PRPHL DRVR, PSFM3, PLASTIC, TO-220AB, 3 PIN, Peripheral Driver
Obsolete
高
对比 BUK102-50GS
外围驱动器
NXP Semiconductors
IC 150 A BUF OR INV BASED PRPHL DRVR, PSFM3, PLASTIC, TO-220AB, 3 PIN, Peripheral Driver
Obsolete
高
对比 BUK101-50DL
外围驱动器
NXP Semiconductors
IC 105 A BUF OR INV BASED PRPHL DRVR, PSFM3, PLASTIC, TO-220AB, SOT-78, SEP-3, Peripheral Driver
Obsolete
高
对比 IRSF3021
外围驱动器
International Rectifier
Buffer/Inverter Based Peripheral Driver, PSFM3, TO-220, 3 PIN
Obsolete
高
对比 SUP85N04-03
功率场效应晶体管
Vishay Intertechnologies
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Obsolete
高
对比 IRF731FI
功率场效应晶体管
STMicroelectronics
3.5A, 350V, 1ohm, N-CHANNEL, Si, POWER, MOSFET
Obsolete
高
对比 STP36NE06
功率场效应晶体管
STMicroelectronics
36A, 60V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Obsolete
IXTP50N28T
功率场效应晶体管
IXYS Corporation
Power Field-Effect Transistor, 50A I(D), 280V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 HUF76121P3
功率场效应晶体管
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 47A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Obsolete
高
对比 SSP45N20B_FP001
功率场效应晶体管
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 35A I(D), 200V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN
Obsolete
高
对比 2SK1889
功率场效应晶体管
SANYO Electric Co Ltd
Power Field-Effect Transistor, 18A I(D), 30V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMP, 3 PIN
Obsolete
高
对比 RJK1001DPN-E0-T2
功率场效应晶体管
Renesas Electronics Corporation
POWER, FET
Obsolete
高
对比 IPP80N06S2L-H5
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Obsolete
高
对比 NP48N055CLE
功率场效应晶体管
Renesas Electronics Corporation
48A, 55V, 0.024ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
Obsolete
高
对比 RJK0702DPN-E0-T2
功率场效应晶体管
Renesas Electronics Corporation
POWER, FET
Obsolete
高
对比 RFP50N05L
功率场效应晶体管
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 50A I(D), 50V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
Obsolete
高
对比 IRFZ25
功率场效应晶体管
Samsung Semiconductor
Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Obsolete
2SK2366
功率场效应晶体管
Renesas Electronics Corporation
TRANSISTOR,MOSFET,N-CHANNEL,500V V(BR)DSS,10A I(D),TO-220AB
Obsolete
高
对比 2SK2798
功率场效应晶体管
Shindengen Electronic Manufacturing Co Ltd
Power Field-Effect Transistor, 6A I(D), 350V, 0.83ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, FTO-220, 3 PIN
Obsolete
高
对比 IPP80N06S2L-09
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.0113ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Obsolete
高
对比 STP5N120
功率场效应晶体管
STMicroelectronics
4.7A, 1200V, 3.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Obsolete
高
对比 FK10UM-10
功率场效应晶体管
Powerex Power Semiconductors
Power Field-Effect Transistor, 10A I(D), 500V, 1.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Obsolete
高
对比 HUF75939P3_NL
功率场效应晶体管
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 22A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Obsolete
高
对比 IPP065N03LG
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 50A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Obsolete
高
对比 STP12NM60N
功率场效应晶体管
STMicroelectronics
10A, 600V, 0.41ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Obsolete
高
对比 2SK1159
功率场效应晶体管
Renesas Electronics Corporation
8A, 450V, 0.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
Obsolete
高
对比 2SK3110-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N Channel MOSFET, MP-45F, /Bag
Obsolete
2SK1155-E
功率场效应晶体管
Renesas Electronics Corporation
Silicon N Channel MOSFET, TO-220AB, /Tube
Obsolete
高
对比 APT10026RKVR
功率场效应晶体管
Advanced Power Technology
Power Field-Effect Transistor, 0.48A I(D), 1000V, 26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 STP4NC60
功率场效应晶体管
STMicroelectronics
4.2A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 NP80N04CHE-S12-AZ
功率场效应晶体管
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25, /
Obsolete
高
对比 2SK2480-AZ
功率场效应晶体管
Renesas Electronics Corporation
Silicon N Channel MOSFET, MP-45F, /Bag
Obsolete
高
对比 NP80N055CHE-AZ
功率场效应晶体管
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25, /
Obsolete
高
对比 2SK3109-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-25, /Bag
Obsolete
高
对比 2SK3457-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-45F, /Bag
Obsolete
高
对比 2SK3305-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-25, /Bag
Obsolete
高
对比 2SK3053-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-45F, /Bag
Obsolete
2SK3299-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-25, /Bag
Obsolete
高
对比 2SK2476-AZ
功率场效应晶体管
Renesas Electronics Corporation
Silicon N Channel MOSFET, MP-45F, /Bag
Obsolete
高
对比 NP88N055CLE-AZ
功率场效应晶体管
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25, /
Obsolete
高
对比 FS30UMH-06
功率场效应晶体管
Powerex Power Semiconductors
Power Field-Effect Transistor, 30A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 NP88N075CUE-AZ
功率场效应晶体管
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25, /
Obsolete
高
对比 2SK3042
功率场效应晶体管
Panasonic Electronic Components
Power Field-Effect Transistor, 7A I(D), 250V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220D, 3 PIN
Obsolete
高
对比 NP80N04CHE-AZ
功率场效应晶体管
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25, /
Obsolete
高
对比 BUZ110SL
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Obsolete
高
对比 BUZ111SL
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Obsolete
高
对比 IPP03N03LBG
功率场效应晶体管
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN
Obsolete
2SK3115-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-45F, /Bag
Obsolete
高
对比 2SK3058-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N Channel MOSFET, MP-25, /Bag
Obsolete
高
对比 FQP12N20L
功率场效应晶体管
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 11.6A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 2SK3325-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-25, /Bag
Obsolete
高
对比 2SK3326-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N Channel MOSFET, MP-45F, /Bag
Obsolete
高
对比 2SK3060-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-25, /Bag
Obsolete
高
对比 HUFA76429P3
功率场效应晶体管
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 47A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB,
Obsolete
高
对比 BUK9528-55A
功率场效应晶体管
NXP Semiconductors
TRANSISTOR 42 A, 55 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power
Obsolete
高
对比 2SK4144-AZ
功率场效应晶体管
Renesas Electronics Corporation
Nch Single Power Mosfet 60V 70A 5.8Mohm Mp-45F/To-220, TO-220, /Bag
Obsolete
高
对比 2SK1809-E
功率场效应晶体管
Renesas Electronics Corporation
5A, 600V, 1.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN
Obsolete
2SK2365-AZ
功率场效应晶体管
Renesas Electronics Corporation
2SK2365-AZ
Obsolete
高
对比 2SK2133-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-25, /Bag
Obsolete
高
对比 STP75NF75L
功率场效应晶体管
STMicroelectronics
75A, 75V, 0.013ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN
Obsolete
高
对比 2SK2826-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N-Channel Power Mosfet, MP-25, /Bag
Obsolete
高
对比 NP40N055CHE-AZ
功率场效应晶体管
Renesas Electronics Corporation
Power MOSFETs for Automotive, MP-25, /
Obsolete
高
对比 2SK3056-AZ
功率场效应晶体管
Renesas Electronics Corporation
Switching N Channel MOSFET, MP-25, /Bag
Obsolete
高
对比 STP20NM60A
功率场效应晶体管
STMicroelectronics
20A, 600V, 0.29ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 2SK3094
功率场效应晶体管
SANYO Electric Co Ltd
Power Field-Effect Transistor, 5.5A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 IRF720A
功率场效应晶体管
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
Obsolete
高
对比 NP80N03CDE
功率场效应晶体管
Renesas Electronics Corporation
80A, 30V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, MP-25, 3 PIN
Obsolete
