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IPD30N10S3L-34

发布时间:2022/2/18 17:02:00 访问次数:209

当天下单,当天发货IPD30N10S3L-34

Infineon Technologies N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class-leading power MOSFETs for the highest power density and energy-efficient solutions. Ultra-low gate and output charges, together with the lowest on-state resistance in small footprint packages, make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Superfast switching Control FETs, together with low EMI Sync FETs, provide solutions that are easy to design. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
OptiMOS™ products are available in high-performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency, and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
FEATURES
Optimized SyncFET for high-performance buck converters
100% avalanche tested
N-channel

Very low on-resistance RDS(on) @ VGS=4.5V
Ultra-low gate (Qg) and output charge (Qoss) for given RDS(on)
Qualified according to JEDEC for target applications
Superior thermal resistance
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21
APPLICATIONS
Onboard power for the server
Power management for high-performance computing
Synchronous rectification
High power density point of load converters

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