STP601D20N03 20A30V 场效应MOS管 应用中低压电源板控制方案SUD50P10-43L-GE3STP601DSUD50P06-15-GE3 SUD50P06-15L-GE3HM50P06Kis the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density,
STP601D TO252 30A 60V P管 场效应MOS管 现货库存20N03 20A30V 场效应MOS管 应用中低压电源板控制方案
台积电计划在中国台湾新竹新建2nm工厂，时间大概在五年后。去年年底，台积电通过了位于中国台湾南
科地区的3纳米工厂环评，而即将落户在新竹的3纳米研发厂房的环评也于近期得以顺利通过，一旦环评大
会的结论得以确认，3纳米晶圆的生产将很快开展，预计可以顺利赶上量产时程。
报道称，台积电厂务处资深处长庄子寿在接受采访时表明了台积电持续深耕台湾的决心，并称“假设要再进
一步研发2纳米制程，必须将研发人才留在新竹，|中国半导体论坛公众号|避免人才外流，因此从整体产业、
人才布局角度，仍希望将研发厂房设于新竹”。SUD50P10-43L-GE3
SUD50P10-43L-GE3STP601DSUD50P06-15-GE3 SUD50P06-15L-GE3HM50P06Kis the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STP601D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
媒体评论称，本次台积电再次宣布将2纳米技术工厂落户新竹，透露了台积电持续深耕半导体市场的决心。
6月11日，台积电3nm厂在台湾环保署专案小组进行第三次初审，获环评委员建议修正后通过，将送环评
大会确认结论。
据了解，台积电计划在新竹科学工业园区设置研发中心，提供3nm制程研发与先期量产，竹科管理局对此
提出扩建计划环境影响说明书，今（11）日通过了第三次环评初审，具体结论要等环评大会确认。
STP601D is the P-Channel logic enhancement mode power field effect transistor which
is produced using high cell density, DMOS trench technology. The STP601D has been
designed specially to improve the overall efficiency of DC/DC converters using either
synchronous or conventional switching PWM controllers. It has been optimized for low
gate charge, low RDS(ON) and fast switching speed.
