rd15hvf1是一个专门MOS FET型晶体管专为高功率放大器应用VHF/UHF-系统蒸发散
特性：高功率高增益：Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHzPout>15W, Gp>7dB @Vdd=12.5V,f=520MHz高效率：60%typ.上VHF 频带高效率：55%typ.上UHF 频带 应用：对于输出的高功率放大器阶段VHF/UHF频带移动无线sets ROHS柔性：rd15hvf1-101是RoHS兼容产品RoHS遵守指示后，由信“G”该地段的标志该产品包括高熔融高温型焊料中的铅.如何以往，它适用于RoHS方向以下情况除外.1.Lead高熔融焊锡（i.e.tin无铅焊料合金中含有较多的than85%领先.）DESCRIPTION rd15hvf1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers applica-tions. FEATURES High power and High Gain: Pout>15W, Gp>14dB @Vdd=12.5V,f=175MHz Pout>15W, Gp>7dB @Vdd=12.5V,f=520MHz High Efficiency: 60%typ. on VHF Band High Efficiency: 55%typ. on UHF Band APPLICATION For output stage of high power amplifiers in VHF/UHFBand mobile radio sets. RoHS COMPLIANT rd15hvf1-101 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the lot marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
