SiC肖特基二极管
发布时间:2019/1/23 10:14:41 访问次数:2571
ao4415采用先进沟槽技术
提供出色的rds(on)和超低低栅极
收费。 该设备适合用作负载
开关或pwm应用。
- 51电子网公益库存:
- TM1621D
- UM7222
- XC7VX485T-3FF1157E
- XC7VX485T-3FF1927E
- XC7VX485T-3FFG1158C
- XC7VX485T-3FFG1761C
- XC7VX690T-1FF1157C
- XC7VX690T-1FFG1158C
- XC7VX690T-1FFG1761I
- XC7VX980T-3FFG1930C
- XF-48
- XMC1100
- XMC1302
- ZXLD1370EST16TC
- XC7VX485T-2FFG1927E
- XC6SLX100T-2FGG676C
- W971GG6KB25I
- P004676-02A
- P3203EVG
- PC28F128G18AF
toshiba offers a wide range of 2nd gen.650-v silicon carbide schottky barrier diodes (sic sbds) with a rated current of 2 a to 10 a, in through-hole (to-220) packages.
the 2nd gen.sic sbd series provides a 30% lower figure of merit (vf*qc)*1 and a higher surge peak forward current (ifsm) than the 1st gen.sic sbd series and therefore helps improve the efficiency and reduce the size of power supplies.
东芝提供各种第二代gen.650-v碳化硅肖特基势垒二极管(sic sbd),额定电流为2 a至10 a,采用通孔(to-220)封装。
第二代gen.sic sbd系列的品质因数(vf * qc)* 1低于第一代gen.sic sbd系列,浪涌峰值正向电流(ifsm)低30%,因此有助于提高效率并缩小尺寸 电源。
introductionhigh surge forward current (ifsm): approximately 7 to 9 times of current rating if(dc)figure of merit (vf・qc[note 1]): approximately 30% reduction compared to the 1st generation devices, realizing higher efficiencyvarious package lineup including isolated type and surface mount type:suit various design requirements
purposesic sbds are suitable for power factor correction (pfc) circuits in high-efficiency power supplies, chopper circuits, and freewheel diodes integrated in switching devices.consumer electronics and office equipment: 4k lcd tvs, projectors, multifunction copiers, etc.industrial equipment: communication base stations, pc servers, etc.ac-dc power suppliesdc-dc power supplieshttp://yifadz.51dzw.com
*1 vf・qc : the product of forward voltage and total charge (vf*qc) indicates the loss performance of sic schottky barrier diodes. when devices with the same current rating are compared, a device with a lower vf*qc provides a lower loss.
高浪涌正向电流(ifsm):电流额定值的大约7至9倍if(dc)
优点(vf·qc [注1]):与第1代设备相ao4415比减少约30%,实现更高的效率
各种封装阵容包括隔离型和表面贴装型:适合各种设计要求
img_sic_13_en
img_sic_14_en
目的
sic sbd适用于集成在开关器件中的高效电源,斩波电路和续流二极管中的功率因数校正(pfc)电路。
消费电子产品和办公设备:4k液晶电视,投影仪,多功能复印机等
工业设备:通信基站,pc服务器等
ac-dc电源
dc-dc电源http://gcddz.51dzw.co
* 1 vf·qc:正向电压和总电荷(vf * qc)的乘积表示sic肖特基势垒二极管的损耗性能。 当比较具有相同电流额定值的器件时,具有较低vf * qc的器件提供较低的损耗。
ao4415采用先进沟槽技术
提供出色的rds(on)和超低低栅极
收费。 该设备适合用作负载
开关或pwm应用。
- 51电子网公益库存:
- TM1621D
- UM7222
- XC7VX485T-3FF1157E
- XC7VX485T-3FF1927E
- XC7VX485T-3FFG1158C
- XC7VX485T-3FFG1761C
- XC7VX690T-1FF1157C
- XC7VX690T-1FFG1158C
- XC7VX690T-1FFG1761I
- XC7VX980T-3FFG1930C
- XF-48
- XMC1100
- XMC1302
- ZXLD1370EST16TC
- XC7VX485T-2FFG1927E
- XC6SLX100T-2FGG676C
- W971GG6KB25I
- P004676-02A
- P3203EVG
- PC28F128G18AF
toshiba offers a wide range of 2nd gen.650-v silicon carbide schottky barrier diodes (sic sbds) with a rated current of 2 a to 10 a, in through-hole (to-220) packages.
the 2nd gen.sic sbd series provides a 30% lower figure of merit (vf*qc)*1 and a higher surge peak forward current (ifsm) than the 1st gen.sic sbd series and therefore helps improve the efficiency and reduce the size of power supplies.
东芝提供各种第二代gen.650-v碳化硅肖特基势垒二极管(sic sbd),额定电流为2 a至10 a,采用通孔(to-220)封装。
第二代gen.sic sbd系列的品质因数(vf * qc)* 1低于第一代gen.sic sbd系列,浪涌峰值正向电流(ifsm)低30%,因此有助于提高效率并缩小尺寸 电源。
introductionhigh surge forward current (ifsm): approximately 7 to 9 times of current rating if(dc)figure of merit (vf・qc[note 1]): approximately 30% reduction compared to the 1st generation devices, realizing higher efficiencyvarious package lineup including isolated type and surface mount type:suit various design requirements
purposesic sbds are suitable for power factor correction (pfc) circuits in high-efficiency power supplies, chopper circuits, and freewheel diodes integrated in switching devices.consumer electronics and office equipment: 4k lcd tvs, projectors, multifunction copiers, etc.industrial equipment: communication base stations, pc servers, etc.ac-dc power suppliesdc-dc power supplieshttp://yifadz.51dzw.com
*1 vf・qc : the product of forward voltage and total charge (vf*qc) indicates the loss performance of sic schottky barrier diodes. when devices with the same current rating are compared, a device with a lower vf*qc provides a lower loss.
高浪涌正向电流(ifsm):电流额定值的大约7至9倍if(dc)
优点(vf·qc [注1]):与第1代设备相ao4415比减少约30%,实现更高的效率
各种封装阵容包括隔离型和表面贴装型:适合各种设计要求
img_sic_13_en
img_sic_14_en
目的
sic sbd适用于集成在开关器件中的高效电源,斩波电路和续流二极管中的功率因数校正(pfc)电路。
消费电子产品和办公设备:4k液晶电视,投影仪,多功能复印机等
工业设备:通信基站,pc服务器等
ac-dc电源
dc-dc电源http://gcddz.51dzw.co
* 1 vf·qc:正向电压和总电荷(vf * qc)的乘积表示sic肖特基势垒二极管的损耗性能。 当比较具有相同电流额定值的器件时,具有较低vf * qc的器件提供较低的损耗。
上一篇:多电机控制单芯片少引脚数微控制器
下一篇:英特尔MESO逻辑器件