光电二极管模块

光电二极管模块属性

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光电二极管模块描述

供应光电二极管模块，自带集成放大电路和温度补偿功能，配套用于雪崩二极管、位敏探测器、四象限探测器、波长敏感探测器，特别适合于系统集成、仪器开发、科学研究。

自带集成放大电路板和温度补偿功能的雪崩二极管和雪崩二极管阵列
　Order #
Chip
Type

50159502
AD1100-8
USB-module APD-eval-kit

501543
SiPM
USB-module SiPM-eval-kit

50146502
25AA0.04-9
125 MHz LIDAR APD-array-eval-kit

501476
64AA0.04-9
125 MHz LIDAR APD-array-eval-kit


不带集成放大电路板的雪崩二极管
　Order #
Type
Transimpedance/Ohm
Bandwidth/MHz

Chip
Package

Series 8 (for 800nm)

500002
AD230-8
TO5
2750
2000

501535
AD230-8
TO52
2750
2000

500003
AD500-8
TO5
2750
1000

501536
AD500-8
TO52
2750
1300

Series 9 (for 900nm)

501403
AD500-9-8015
TO52
2750
500

501386
16AA0.13-9
Ceramic
10k
500

500756
AD230-9
TO5
2750
600

500490
AD500-9
TO5
2750
500

Series 10 (for 1064nm)

501387
AD800-10
TO8S
10k
65



自带集成放大电路板和温度补偿功能的位敏探测器、四象限探测器、波长敏感探测器
　Order #
Chip
Type
Package

501101
QP45-Q
Quadrant PD
HVSD

500741
QP50-6
Quadrant PD
SD2

500964
QP50-6
Quadrant PD
SD2-DIAG

501102
QP50-6 (18µm)
Quadrant PD
SD2

501110
QP50-6 (18µm)
Quadrant PD
SD2-DIAG

501104
QP154-Q
Quadrant PD
HVSD

500788
DL16-7
PSD
PCBA3

500744
DL100-7
PSD
PCBA3

500819
DL400-7
PSD
PCBA

500008
WS7.56
Wavelength sensitive PD
PCBA2

501495
X100-7 with Scintillator
Gamma pulse counter
Shielded module


高压电源模块
　Order #
Max.Voltage/V
Ripple/mV
Description
Feature

501385
-500
7.5
High performance HV source
Ultra low ripple

501381
+500
7.5
High performance HV source
Ultra low ripple

501382
+200
7.5
High performance HV source
Ultra low ripple

501383
+200
<10
Compact HV source
Small footprint

501384
+60
<10
PIN-photodiode HV source
Very small footprint


雪崩二极管
　


供应雪崩二极管（APD，Avalanche photodiodes），是一种内部增益机制的光电二极管：蓝光增强型、红光增强型、红外增强型（900nm、1064nm）。该系列雪崩二极管应用广泛，包括：安检设备、激光测距、运动控制、分析仪器、生物医疗、光通信、军事、航空航天、光通讯。备注：如果采购数量10片以上，提供配套的驱动电路模块。

　Series 11: Blue sensitivity enhanced (for biomedical applications)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
M=100
410nm 50Ω

mm
mm2
nA
ns

500970
AD800-11
TO52S1
Ø0.8
0.5
1
1

500967
AD1900-11
TO5i
Ø1.95
3
5
2

Series 12: Red sensitivity enhanced (cut-off frequency up to 3 GHz)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
660nm M=100
660nm 50Ω

mm
mm2
A/W
GHz

501828
AD100-12
LCC6.1
Ø0.1
0.008
50
typ.3, min.2

501829
AD100-12
LCC6.1f
Ø0.1
0.008
44
typ.3, min.2

501831
AD100-12
TO52S1
Ø0.1
0.008
50
typ.3, min.2

501157
AD230-12
LCC6.1
Ø0.23
0.042
50
typ.3, min.2

501156
AD230-12
LCC6.1f
Ø0.23
0.042
44
typ.3, min.2

501820
AD230-12
LCC6.1f
Ø0.23
0.042
44
typ.3, min.2

501162
AD230-12
TO52S1
Ø0.23
0.042
50
typ.3, min.2

501155
AD500-12
LCC6.1
Ø0.5
0.196
50
typ.3, min.2

501154
AD500-12
LCC6.1f
Ø0.5
0.196
44
typ.3, min.2

501819
AD500-12
LCC6.1f
Ø0.5
0.196
44
typ.3, min.2

501163
AD500-12
TO52S1
Ø0.5
0.196
50
typ.3, min.2

Series 8: Optimized for high cut-off frequencies-850 nm (optimized for high speeds)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
M=100
M=100 20V 50Ω

mm
mm2
nA
ns

501810
AD100-8
LCC6.1
Ø0.1
0.008
0.05
<0.18

501811
AD100-8
LCC6.1f
Ø0.1
0.008
0.05
<0.18

501812
AD100-8
LCC6.1f
Ø0.1
0.008
0.05
<0.18

500011
AD100-8
TO52S1
Ø0.1
0.008
0.05
<0.18

501171
AD100-8
TO52S3
Ø0.1
0.008
0.05
<0.18

501078
AD230-8
LCC6.1
Ø0.23
0.04
0.3
0.18

501079
AD230-8
LCC6.1f
Ø0.23
0.04
0.3
0.18

501805
AD230-8
LCC6.1f
Ø0.23
0.04
0.3
0.18

500019
AD230-8
TO52S1
Ø0.23
0.04
0.3
0.18

500022
AD230-8
TO52S3
Ø0.23
0.04
0.3
0.18

501496
AD230-8
ODFN2x2
Ø0.23
0.04
0.3
0.18

501077
AD500-8
LCC6.1
Ø0.5
0.2
0.5
0.35

501076
AD500-8
LCC6.1f
Ø0.5
0.2
0.5
0.35

501809
AD500-8
LCC6.1f
Ø0.5
0.2
0.5
0.35

500030
AD500-8
TO52S1
Ø0.5
0.2
0.5
0.35

500305
AD500-8
TO52S2
Ø0.5
0.2
0.5
0.35

500155
AD500-8
TO52S3
Ø0.5
0.2
0.5
0.35

500947
AD800-8
TO52S1
Ø0.8
0.5
2
0.7

501117
AD1100-8
TO52S1
Ø1.13
1
4-6
1

500015
AD1900-8
TO5i
Ø1.95
3
15
1.4

501194
AD3000-8
TO5i
Ø3
7.07
30
2

500160
AD5000-8
TO8i
Ø5
19.63
60
3

500002
AD230-8-2.3G
TO5
AD230-8-2.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.

500003
AD500-8-1.3G
TO5
AD500-8-1.3G TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO5 package.

Series 9: NIR sensitivity enhanced-900nm (specifically for LIDAR and laser rangefinders)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
M=100
M=100

mm
mm2
nA
ns

501815
AD100-9
LCC6.1
Ø0.1
0.008
0.1
<0.5

501816
AD100-9
LCC6.1f
Ø0.1
0.008
0.1
<0.5

501123
AD230-9
LCC6.1
Ø0.23
0.04
0.5
0.5

501817
AD230-9
LCC6.1f
Ø0.23
0.04
0.5
0.5

500020
AD230-9
TO52S1
Ø0.23
0.04
0.5
0.5

501265
AD230-9
TO52S1F2
Ø0.23
0.04
0.5
0.5

500023
AD230-9
TO52S3
Ø0.23
0.04
0.5
0.5

501122
AD500-9
LCC6.1
Ø0.5
0.2
0.8
0.55

501818
AD500-9
LCC6.1f
Ø0.5
0.2
0.8
0.55

500031
AD500-9
TO52S1
Ø0.5
0.2
0.8
0.55

500590
AD500-9
TO52S1F2
Ø0.5
0.2
0.8
0.55

500306
AD500-9
TO52S2
Ø0.5
0.2
0.8
0.55

500156
AD500-9
TO52S3
Ø0.5
0.2
0.8
0.55

501196
AD800-9
TO52S1
Ø0.8
0.5
2
0.9

501197
AD1100-9
TO52S1
Ø1.13
1
4
1.3

501208
AD1500-9
TO5i
Ø1.5
1.77
2
2

501198
AD3000-9
TO5i
Ø3
7.07
30
2

500161
AD5000-9
TO8i
Ø5
19.63
60
3

500756
AD230-9-400M
TO5
AD230-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.

500490
AD500-9-400M
TO5
AD500-9-400M-TO5 is a high frequency optical data receiver comprising an Avalanche Silicon Photodiode and a transimpedance amplifier in a hermetically sealed TO-5 package.

Multi-Element Array

501099
8AA0.4-9
SOJ22GL
APD Array 8 Elements, QE>80% at 760-910nm with NTC

501098
16AA0.13-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm with NTC

500038
16AA0.13-9
DIL18
APD Array 16 Elements, QE>80% at 760-910nm

501097
16AA0.4-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm

50130802
25AA0.04-9
BGA
APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC

50130802
25AA0.16-9
BGA
APD Array 25 (5×5) elements, QE>80% at 760-910nm with PTC

50130702
64AA0.04-9
BGA
APD Array 64 (8×8) elements, QE>80% at 760-910nm with PTC

501207
QA4000-9
TO8Si
Quadrant Avalanche Photodiode, QE>80% at 760-910nm

Series 10: NIR sensitivity enhanced - 1064nm (specifically for laser rangefinders, targeting systems or any applications using YAG lasers or similar NIR radiation sources)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
M=100
M=100 1064nm
　

mm
mm2
nA
ns

500953
AD500-10
TO5i
Ø0.5
0.2
1.5
4

501233
AD800-10
TO5i
Ø0.8
0.5
3
5

500883
AD1500-10
TO5i
Ø1.5
1.77
7
5

50123401
AD4000-10
TO8Si
Ø4
12.56
50
6

501387
AD800-10
TO8S
High speed, high gain, low noise, low power consumption hybrid (AD800-10+TIA)

Multi-Element Array

501174
QA4000-10
TO8Si
Quadrant Avalanche Photodiode, High QE at 850-1070nm


光电倍增管
　


供应光电倍增管（Silicon Photomultiplier），基于KETEK技术，专注于微弱光的检测。该系列光电倍增管具有如下特点：单光子计数、灵敏度高、信噪比高、效应速度快、温度影响小、结构紧凑，广泛应用于：化学分析、医疗诊断、科学研究、工业集成。

　Order #
Chip Package
Active Area(mm²)
Pixel Size(µm)
Pixel Number
Trench Technology
Geometrical Efficiency(%)
Dark Rate

50150804
THD
1.2×1.2
50×50
576
No
70
500

50150801
THD
3.0×3.0
50×50
3600
No
70
500

50150802
THD
3.0×3.0
50×50
3600
Yes
63
300

50150803
THD
6.0×6.0
60×60
10000
Yes
66
500


APD阵列
　


供应APD阵列：线性APD阵列、矩阵APD阵列。该系列雪崩二极管阵列主要用于：激光雷达、激光测距。我们同时供应雪崩二极管和雪崩二极管模块。

　Order #
Chip
Package
Description

501099
8AA0.4-9
SOJ22GL
APD Array 8 Elements, QE>80% at 760-910nm with NTC

501098
16AA0.13-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm with NTC

500038
16AA0.13-9
DIL18
APD Array 16 Elements, QE>80% at 760-910nm

501097
16AA0.4-9
SOJ22GL
APD Array 16 Elements, QE>80% at 760-910nm

50130802
25AA0.04-9
BGA
APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC

50130902
25AA0.16-9
BGA
APD Array 25 (5x5) elements, QE>80% at 760-910nm with PTC

50130702
64AA0.04-9
BGA
APD Array 64 (8x8) elements, QE>80% at 760-910nm with PTC

501207
QA4000-9
TO8Si
Quadrant Avalanche Photodiode, QE>80% at 760-910nm


位敏探测器
　



供应位敏探测器（PSD，Position Sensitive Detector），是根据横向光电效应（电压和电流信号随着光斑位置变化而变换的现象）的半导体敏感元件，将照射在光敏面上的光斑强度和位移量转换为电信号，以实现位置探测。

　Order #
Chip
Package
Dimensions
ActiveArea(mm)
Area(mm²)
Rise Time(ns)

500588
OD3.5-6
SO8
single
3.5×1
3.5
200

500073
OD3.5-6
SMD
single
3.5×1
3.5
200

501278
OD6-6
SO16
single
6×1
6
200

501115
OD6-6
SMD
single
6×1
6
200

500062
DL16-7
CERpin
dual axis
4×4
16
500

500162
DL16-7
CERsmd
dual axis
4×4
16
500

501020
DL16-7
LCC10G
dual axis
4×4
16
500

500054
DL100-7
CERpin
dual axis
10×10
100
4000

500056
DL100-7
CERsmd
dual axis
10×10
100
4000

500952
DL100-7
LCC10
dual axis
10×10
100
4000

500066
DL400-7
CERpin
dual axis
20×20
400
4000

500068
DL400-7
CERsmd
dual axis
20×20
400
4000


四象限探测器
　


供应四象限探测器（QP，Quadrant photodiodes），由小间隙隔开的四个有效探测区域组成。该系列四象限探测器应用广泛，包括：激光光束的位置测量、需要精确调整的光学系统。

　Series 6 - Quadrant photodiodes (low dark current)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
10V
850nm 10V

mm
mm2
nA
ns

501222
QP1-6
TO52
Ø1.13
4×0.25
0.1
20

501040
QP5-6
TO5
Ø2.52
4×1.25
0.2
20

501254
QP5.8-6
TO5
2.4×2.4
4×1.45
0.4
20

501256
QP10-6
TO5
Ø3.57
4×2.5
0.5
20

500140
QP20-6
TO8S
Ø5.05
4×5
1
30

500732
QP50-6
TO8S
Ø7.8
4×12.5
2
40

500142
QP50-6
TO8S
Ø7.8
4×12.5
2
40

501416
QP50-6
TO8S flat
Ø7.8
4×12.5
2
40

501417
QP50-6
TO8S flat
Ø7.8
4×12.5
2
40

501276
QP100-6
LCC10G
Ø11.2
4×25
4
40

50127601
QP100-6
LCC10S
Ø11.2
4×25
4
40

Series 7 - Quadrant photodiodes (fully depletable)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
10V
905nm 10V

mm
mm2
nA
ns

501319
QP100-7
LCC10G
10×10
4×25
2
50

Series Q - Quadrant photodiodes (for 1064nm)

Order #
Type
Active Area
Dark Current
Rise Time

Chip
Package
Size
Area
150V
1064nm 150V 50Ω

mm
mm2
nA
ns

501049
QP22-Q
TO8S
Ø5.3
4×5.7
1.5
12

501048
QP45-Q
TO8S
6.7×6.7
4×10.96
8
12

501275
QP45-Q
LCC10G
6.7×6.7
4×10.96
8
12

501272
QP100-Q
LCC10G
10×10
4×25
6.5
12

500798
QP154-Q
TO1032i
Ø14.0
4×38.5
10
12

501313
QP154-Q
TO1081i
Ø14.0
4×38.5
10
12


铟镓砷探测器
　



供应铟镓砷探测器（InGaAs detectors），有效探测直径可达3mm，具有暗电流低和灵敏度高的特点，封装形式：TO针脚形式和SMD贴片形式。

　InGaAs detectors (high sensitivity up to 2600nm)

Order #
Type
Active Area
Dark Current
Spectral responsivity
Waveband

Chip
Package
Size
Area
5V
650nm
1550nm

mm
mm2
nA
A/W
A/W
nm

501201
PC0.7-i
LCC6.1
1
0.7
2
0.05
0.95
900-1700

501203
PC0.7-i
TO52S1
1
0.7
2
0.05
0.95
900-1700

501202
PC0.7-ix
LCC6.1
1
0.7
2
0.3
0.95
600-1700

501204
PC0.7-ix
TO52S1
1
0.7
2
0.3
0.95
600-1700

501251
PC2.6-i
TO5i
2
2.6
10
0.05
0.95
900-1700

501266
PC7.1-i
TO5i
3
7.1
25
0.05
0.95
900-1700


波长敏感探测器
　


供应波长敏感探测器（WS，Wavelength-sensitive diodes），利用特定波长在硅基材料的辐射吸收深度来实现，特别适合于单色光的波长检测。

　Wavelength sensitive diodes (particularly suitable for monochromatic light)

Order #
Type
Dark Current
Rise Time Diode 1
Rise Time Diode 2

Chip
Package
5V
0V 1kΩ
0V 1kΩ

nA
ns
ns

501224
WS7.56
TO5
10
10000
1000

501225
WS7.56
TO5i
5
10000
1000


辐射探测器
　


供应辐射探测器（Detectors for Ionizing Radiation），具有吸收容量高、暗电流低、完全耗尽的特点，用于检测原子颗粒。

　Detectors for ionizing radiation (silicon radiation detectors)

Order #
Type
Active Area
Dark Current
Gamma-energy (KeV)

Chip
Package
Size
Area

mm
mm2
nA
KeV

50190301
X5-γ
TO8S
Ø2.52
5
0.01
>1

50190401
X10-γ
TO8Si
Ø3.75
10
0.02
>1

50190001
X10-γ
TO8S Sc
Ø3.75
10
0.02
>2

501907
X10-6
TO39
Ø3.57
10
0.5
>5

501401
X100-7
LCC10
10×10
100
3
>5

501400
X100-7
CerPin
10×10
100
3
>5

50144501
X100-7.2
CerPin
10×10
100
5
>5

50147702
X100-7
CerPin
10×10
100
5
>5

50147701
X100-7
CerPin
10×10
100
5
>5


　Arrays for X-ray inspection, optimized for scintillator luminescence. Suitable for linear multi-device-assembly with constant photodiode pitch

Order #
Type
Elements
Pitch
Active Area
Dark Current
Capacitance

Chip
Package
Size
Area

mm
mm
mm2
pA
pF

50146101
16XA1.9-B
DIL18 full
16
1.275
0.9×2.15
1.94
5
250

50146102
16XA1.9-B
DIL18 slim
16
1.275
0.9×2.15
1.94
5
250

50146201
16XA2.6-A
DIL18 full
16
1.575
1.2×2.15
2.58
5
135

50146202
16XA2.6-A
DIL18 slim
16
1.575
1.2×2.15
2.58
5
135

50146301
16XA5.2-A
DIL18 full
16
2.525
2.15×2.4
5.16
7.5
240

50146302
16XA5.2-A
DIL18 slim
16
2.525
2.15×2.4
5.16
7.5
240


光电管接收模块
　


供应光电管接收模块，由如下两部分组成：光电二极管和前置放大电路，TEC制冷模块可选（提高系统的信噪比）。该系列光电探测器模块对电路进行优化，将电磁干扰降到最小，内置前置放大电路可以用示波器或数据采集卡直接读取对应的电压值。根据不同应用，光电二极管可选，包括：UV Si，Vis Si，NIR InGaAs，Extended InGaAs，PbS，PbSe。
　

根据探测器种类、有效探测面积、是否包含TEC制冷，如下型号可供选择：

Photodiode Receiver Module, Si (200-1000nm), 2.5mm
Photodiode Receiver Module, Si (200-1000nm), 5.0mm
Photodiode Receiver Module, Si (200-1000nm), 5.0mm, TE Cooled
Photodiode Receiver Module, Si (200-1000nm), 10.0mm
Photodiode Receiver Module, Si (300-1000nm), 1.0mm
Photodiode Receiver Module, Si (300-1000nm), 2.5mm
Photodiode Receiver Module, Si (300-1000nm), 5.0mm
Photodiode Receiver Module, Si (300-1000nm), 5.0mm, TE Cooled
Photodiode Receiver Module, Si (300-1000nm), 10.0mm
Photodiode Receiver Module, Si (300-1000nm), 11.0mm, TE Cooled
Photodiode Receiver Module, InGaAs (800-1600nm), 3.0mm, TE Cooled
Photodiode Receiver Module, InGaAs(800-1700nm), 1.0mm
Photodiode Receiver Module, InGaAs (1000-1700nm), 3.0mm
Photodiode Receiver Module, InGaAs(1200-2500nm), 1.0mm, TE Cooled
Photodiode Receiver Module, InGaAs(1200-2500nm), 3.0mm, TE Cooled
Photodiode Receiver Module, InGaAs(1200-2600nm), 1.0mm
Photodiode Receiver Module, InGaAs(1200-2600nm), 3.0mm
Photodiode Receiver Module, PbS(1000-2800nm), 2.0mm, TE Cooled
Photodiode Receiver Module, PbSe(1000-4500nm), 2.0mm, TE Cooled
光电管放大器
　



供应光电管放大器，直接将光电二极管、光电倍增管等电流源的电流信号转换成数字信号。通过切换A/W，可以设置电流值显示或者功率值显示(作为光功率计)。该系列光电管放大器具有如下特点：满量程输入范围从±20nA至±20mA；可变偏压从-14V至14V；LCD显示读数；RS-232串行接口。

　Specifications
Max input without damage ±25mA
Full scale range ±20nA to 20mA in decade steps, 1pA max. resolution
A/W setting 0.100 to 1.000A/W in increments of .005A/W
Output impedance 100Ω
Bias voltage Selectable -14V to +14V in 6.5mV increments
Analog ourput port ±2V corresponds to ±20,000 counts of range in use
Noise and Drift <1pA/5 seconds on most sensitive range
Frequency response(-3dB) DC to 2KHz, most sensitive range
DC to 40KHz, least sensitive range
Display 4 1/2 digit LCD, 0.4" high
Power requirement Rechargeable Ni-MH batteries with approximately 10-hours
External supply 85-250VAC, 50-60Hz, <9VA
Dimensions 140mm(W)×63mm(H)×215mm(L)
Weight 0.9kg, excluding external power supply
Operating temperature 0 to +40°C
Accessories provided RS-232 cable, power supply/charger, operating manual

压力传感器
　


供应压力传感器，特点：能效高、稳定性好、准确度高、适合恶劣环境。该系列压力传感器应用：工业生产、环境保护、测量、医学领域。

　Model HDU HMU
Pressure ranges 100 mbar to 5 bar 100 mbar to 10 bar
1 to 70 psi 1 to 70 psi
Pressure type Absolute, Gage, Differential Absolute, Gage, Differential
Output signal 100mV (FSO) 100mV (FSO)
Thermal effects Offset ±0.02 %FSS/°C ±0.02% FSS/°C
Span -0.2% FSS/°C -0.2% FSS/°C
Bridge impedance 0.26 %/°C 0.26 %/°C
Temp. range operating -40-85°C -40-85°C
Dimensions without connections 12×15×7mm³ 10×13×6mm³
Features Analogue sensor with
nearly unlimited resolution Analogue sensor with
nearly unlimited resolution
Cost-effective basic pressure sensor Cost-effective basic pressure sensor
Increased media compatibility

　Model HCL HDO HRO
Pressure ranges 5 to 75 mbar 10 mbar to 5 bar 10 mbar to 10 bar
2 to 30 inH2 4 inH2O to 70 psi 4 inH2O to 150 psi
Pressure type Gage, Differential Absolute, Gage, Differential Gage, Differential
Output signal 20mV (FSO) 90mV (FSO) 90mV (FSO)
Accuracy, non-linearity ±0.05 %FSO ±0.1 %FSO (P-grade) ±0.25 %FSS
±0.2 %FSO (H-grade)
Temp. range compensated 0-70°C 0-50°C 0-70°C
Temp. range operating -25-85°C -40-85°C -25-85°C
Dimensions without connections 13×16×7mm³ 12×15×7mm³ 29×18×11mm³
Features Analogue sensor with nearly unlimited resolution Analogue sensor with
nearly unlimited resolution Analogue sensor with
nearly unlimited resolution
For very low pressures Different accuracy classes available Different accuracy classes available
Excellent offset stability
Virtually no position sensitivity

　Model HCLA HCE HDI
Pressure ranges 2.5 to 75 mbar 10 mbar to 5 bar 10 mbar to 5 bar
1 to 30 inH2O 4 inH2O to 70 psi 4 inH2O to 70 psi
Pressure type Gage, Differential Absolute, Gage, Differential Absolute, Gage, Differential
Output signal 0.25-4.25 V, I²C bus 0.25-4.25 V, SPI bus 0.5-4.5 V, I²C bus
Accuracy, non-linearity ±0.05 %FSS ±0.1 %FSS ±0.1 %FSS
Accuracy, total accuracy N.A. ±0.5 %FSS ±0.5 %FSS (P-grade)
±1.5 %FSS (H-grade)
Temp. range operating -25-85°C -25-85°C -20-85 °C
Dimensions without connections 13×16×7mm³ 13×16×7mm³ 12×15×7mm³
Features Digital signal conditioning Digital signal conditioning Digital signal conditioning
For very low pressures Very high total accuracy Very high total accuracy
Excellent offset stability and virtually no position sensitivity SPI bus interface and analogue output \at the same time I²C bus interface and analogue output
at the same time
I²C bus interface and analogue output
at the same time Different accuracy classes available

　Model LBA LDE
Pressure ranges 25 to 500 Pa 25 to 500 Pa
0.1 to 2 inH2O 0.1 to 2 inH2O
Pressure type Gage, Differential Gage, Differential
Output signal 0.5-4.5 V 0.5-4.5 V, SPI bus
Offset stability 0.3 % p.a. 0.1 % p.a.
Accuracy, total accuracy ±1.5 %FSS ±1.5 %FSS
Dimensions without connections 13×18×8mm³ 13×18×8mm³
Features Unmatched sensitivity and resolution Unmatched offset stability, linearity, sensitivity and resolution
Analogue signal conditioning Digital signal conditioning with SPI bus interface and analogue output at the same time
Micro-flow channel integrated
within sensor chip Micro-flow channel integrated
within sensor chip
High immunity to dust, humidity and long tubing High immunity to dust, humidity and long tubing
Miniature housing Miniature housing

　Model HMA HMI HME
Pressure ranges 100 mbar to 10 bar 100 mbar to 10 bar 101 mbar to 10 bar
1 to 150 psi 1 to 150 psi 1 to 150 psi
Pressure type Gage, Differential Gage, Differential Gage, Differential
Output signal 0.5-4.5 V I²C bus SPI bus
Accuracy, non-linearity ±0.25 %FSS ±0.25 %FSS ±0.25 %FSS
Accuracy, total accuracy ±1.5 %FSS ±1.5 %FSS ±1.5 %FSS
Temp. range compensated -20-85°C -20-85°C -20-85°C
Dimensions without connections 10×13×6mm³ 10×13×6mm³ 10×13×6mm³
Features Increased media compatibility for gases and liquids Increased media compatibility for gases and liquids Increased media compatibility for gases and liquids
Digital signal conditioning Digital signal conditioning Digital signal conditioning
Analogue output signal I²C bus interface SPI bus interface
Very small housings Very small housings Very small housings

　Model SSO SSI KMA
Pressure ranges 200 mbar to 35 bar 200 mbar to 35 bar 500 mbar to 100 bar
3 to 500 ps 3 to 500 psi 7 to 1500 psi
Pressure type Absolute, Gage Absolute, Gage Gage
Output signal 100mV (FSO) 0.5-4.5V, I²C bus 0.5-4.5V
Accuracy, non-linearity ±0.1 %FSS ±0.1 %FSS ±0.4 %FSO
Accuracy, total accuracy ±1.5 %FSS ±1.5 %FSS ±1.5 %FSS
Temp. range compensated 0-50°C -20-85°C 0-85°C
Temp. range operating -40-125°C -40-120°C -20-85°C
Dimensions without connections Φ19mm Φ19mm Φ22×27mm
Features High media compatibility High media compatibility High media compatibility
Fully welded stainless steel
construction Fully welded stainless steel construction Ceramic pressure sensor element in stainless steel housing
Very high total accuracy
I²C bus interface and analogue
output at the same time Digital signal conditioning

压力传感器芯片
　


供应压力传感器芯片，基于高级电阻传感技术(STARe, Sensor Technology for Advanced Resistors)。该系列压力传感器芯片具有稳定性高、适用于恶劣环境的特点，广泛应用于腐蚀性、流动性、油性环境下的高精密压力传感测量，包括：汽车制造、工业、医疗、大型家电。

　Type Pressure range min. typ. max. Unit
Standard Line STARe for pressure measurements of 1 to 30 bar
SL21K-100k-A/GXX 100 kPa 40 70 130 mV@5V
SL21K-250k-A/GXX 250 kPa 60 100 140 mV@5V
SL21K-500k-A/GXX 500 kPa 60 100 140 mV@5V
SL21K-01M0-A/GXX 1.0 MPa 60 100 140 mV@5V
SL21K-03M0-A/GXX 3.0 MPa 60 100 140 mV@5V
Industrial Line STARe for pressure measurements of 100 mbar to 400 bar
IL20L-10k0-GXX 10 kPa 30 60 120 mV@5V
IL20L-35k0-A/GXX 35 kPa 40 100 160 mV@5V
IL20M-03M0-A/GXX 3.0 MPa 60 100 140 mV@5V
IL20M-100k-A/GXX 100 kPa 60 100 140 mV@5V
IL20M-250k-A/GXX 250 kPa 60 100 140 mV@5V
IL20M-500k-A/GXX 500 kPa 60 100 140 mV@5V
IL20M-01M0-A/GXX 1.0 MPa 60 100 140 mV@5V
IL20M-10M0-A/GXX 10.0 MPa 200 250 300 mV@5V
IL20M-40M0-AXX 40.0 MPa 230 290 350 mV@5V
High Stability Line STARe for pressure measurements of 60 mbar to 400 bar
HS20V-06k0-A/G/D05 6 kPa 60 100 140 mV@5V
HS20V-10k0-A/G/D05 10 kPa 60 100 140 mV@5V
HS20L-35k0-A/G/DXX 35 kPa 60 100 140 mV@5V
HS20L-100k-A/G/DXX 100 kPa 60 100 140 mV@5V
HS20M-250k-A/G/DXX 250 kPa 60 100 140 mV@5V
HS20M-500k-A/G/DXX 500 kPa 60 100 140 mV@5V
HS20M-01M0-A/G/DXX 1.0 MPa 60 100 140 mV@5V
HS20M-03M0-A/G/XX 3.0 MPa 60 100 140 mV@5V
HS20M-10M0-A/GXX 10.0 MPa 200 250 300 mV@5V
HS20M-20M0-A08 20.0 MPa 60 100 140 mV@5V
HS20M-40M0-A08 40.0 MPa 60 100 140 mV@5V
Harsh Environmental Line for pressure measurements of 2 bar to 16 bar
HE11C-200K-AXX 200 kPa 60 100 140 mV@5V
HE11C-400K-AXX 400 kPa 60 100 140 mV@5V
HE11C-800K-AXX 800 kPa 60 100 140 mV@5V
HE11C-01M6-AXX 1.6 MPa 60 100 140 mV@5V

压力传感器模块
　


供应压力传感器模块，具有极高的长期稳定性、极低的压力与温度滞后、适用于高静态压力、快速响应、高电阻的特点。该系列压力传感器模块广泛应用于，包括：工业、医学领域。

　Type Pressure range min. typ. max. Unit
K-Serie STARe A/G for absolute and relative pressure requirements
K10-HS20V-06k0-A/GXX 6 kPa 60 100 140 mV@5V
K10-HS20V-10k0-A/GXX 10 kPa 60 100 140 mV@5V
K10-HS20L-35k0-A/GXX 35 kPa 60 100 140 mV@5V
K10-HS20L-100k-A/GXX 100 kPa 60 100 140 mV@5V
K10-HS20M-250k-A/GXX 250 kPa 60 100 140 mV@5V
K10-HS20M-500k-A/GXX 500 kPa 60 100 140 mV@5V
K10-HS20M-01M0-A/GXX 1.0 MPa 60 100 140 mV@5V
K10-HS20M-03M0-A/GXX 3.0 MPa 60 100 140 mV@5V
K10-HS20M-10M0-A/GXX 10.0 MPa 200 250 300 mV@5V
K10-HS20M-20M0-A08 20.0 MPa 60 100 140 mV@5V
K10-HS20M-40M0-A08 40.0 MPa 60 100 140 mV@5V
K-Series STARe D for differential pressure requirements
K10-HS20V-06k0-DXX 6 kPa 60 100 140 mV@5V
K10-HS20L-10k0-DXX 10 kPa 60 100 140 mV@5V
K10-HS20L-35k0-DXX 35 kPa 60 100 140 mV@5V
K10-HS20L-100k-DXX 100 kPa 60 100 140 mV@5V
K10-HS20M-250k-DXX 250 kPa 60 100 140 mV@5V
K10-HS20M-500k-DXX 500 kPa 60 100 140 mV@5V
K10-HS20M-01M0-DXX 1.0 MPa 60 100 140 mV@5V


Products
　
Contact us to find the perfect sensor solution for your specific application. We will be happy to develop sensors or systems to suit your individual requirements.


Detectors
Avalanche photodiodes (APD) and PIN photodiodes; position sensitive PDs (PSD) and quadrant PDs (QP) [more]



Emitters
LEDs and Laser Diodes [more]



Radiation Sensors
Alpha-, beta-, and gamma-, as well as x-ray radiation [more]



Pressure sensor chips
Absolute, relative and differential pressure from 60 mbar to 400 bar [more]



Pressure sensor components
Absolute, relative and differential pressure from 60 mbar to 400 bar [more]



Pressure sensors
Pressure sensors and custom pressure measurement systems [more]



Flow Sensors
State-of-the-art sensors for measuring mass and volumetric flow rates [more]



Liquid Level Sensors
Extensive range of hydrostatic and optical sensors für liquid level monitoring [more]

Detectors
First Sensor offers a wide range of photodiodes with high sensitivity, high speed and low dark currents.
Our detectors are optimized for ultraviolet, visible and ionizing radiation and can be combined with SMD (surface mount device), THD (through hole device) and TO (metal cans) housing technologies.


PIN photodiodes
Photodiodes without internal gain [more]



Avalanche photodiodes (APD)
Photodiodes with internal gain [more]



Avalanche photodiode arrays (APD arrays)
Photodiode arrays with multiple individual sensors, e.g. 8, 16, 32 pixels [more]



Position-sensitive diodes (PSD)
Duo-lateral photodiodes with high spatial resolution [more]



Quadrant photodiodes (QP) – QP series
Photodiodes with 4 segments [more]



Wavelength-sensitive diodes (WS) – WS series
Stacked photodiodes for wavelength measurement [more]



Detectors for ionizing radiation
Photodiodes with or without scintillator for measurement of α, β and γ radiation [more]

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