EUDYNA

发布时间：2020/3/27 14:55:13
所属类别：模块 » PIM模块
公司：深圳双信达智能科技有限公司
联系人：销售部

EUDYNA属性

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EUDYNA描述

Optical Data Links Optical Devices ROSA Products Wireless Devices Sumitomo/Eudyna/FUJITSU

Internally Matched High Power GaN HEMTs

GaN HEMTs for Base Station (C Series)

GaN HEMTs for Radar
GaN HEMT Pallet Amplifiers for Radar
GaN HEMTs for General Purpose

WLCSP MMICs for Micro/Millimeter-wave Applications
C to Ka Band Power Amplifier MMICs (Packages)
C to V Band Power Amplifier MMICs (Chip)
Ku to V Band Low Noise Amplifier MMICs
Ku to V Band Multiplier MMICs
Ku to Ka Band Converter MMICs
Oscillator MMICs

Internally Matched High Power GaAs FETs
High Power GaAs FETs
Small Signal GaAs FETs
GaAs FETs (Chip)

GaAs HEMTs

Sumitomo/Eudyna/FUJITSU

FUJITSU富士通已经与SUMITOMO住友电气工业达成成立一间专注于化合物半导体业务的合资企业优迪那半导体有限公司EUDYNA的决议。这份决议将整和以及巩固富士通旗下的全资子公司富士通量子器件株式会社与住友电气工业两家公司的化合物半导体电子器件业务。富士通与住友电气工业将各占这间合资企业50％的股份。
这间新的合资公司优迪那半导体有限公司将专注于研究开发, 制造和销售覆盖各种用途的化合物半导体器件, 并致力于成长为这个领域科技发展的领导者, 以迅速地建立全球客户的信任.
Optical Semiconductors
激光二极管模块
光电二极管探测器与光接收器模块
光收发器模块
可视激光二极管
微波器件

Sumitomo 住友电气工业设计、生产并销售基于GaAs技术制成的组件、集成电路和模块产品。电子设备部门（EDD）专注于Ⅲ－Ⅳ组件产业，供应先进和优良的产品，用于光纤通讯系统的前端模拟电路，并可提供给客户多样化的标准产品。现今，本公司已可提供10Gb/s SONET/SDH/ATM的丰富产品系列；而基于InP的40Gb/s IC也在迅速发展中，很快也将被列入我们的产品系列之中。本公司生产无线及光纤产品，以及专注于包含了epitaxial water process技术的行动／无线基站经营，顾客可选择采用以离子注入（Ion-implantation）及Epitaxial组件技术为本的多种GaAs MESFET 制作法.
光纤产品GaAs IC
F01 Series 前置放大器IC
F03 Series 限制放大器IC
F05 Series LD驱动IC
F06 Series LED驱动IC
F08 Series PD/APD前置放大器模
无线产品GaAs IC
P01 Series 中等功率FET
P04 Series PDC/GSM/AMPS基站/推进器
P05 Series PHS基站
P06 Series CDMA/PCS基站

砷化镓FET芯片和HEMT芯片
--通用砷化镓场效应晶体管(FET)芯片
--低噪音高电子迁移率晶体管(HEMT)芯片
　
超低噪音已封装HEMT
--超低噪音已封装高电子迁移率晶体管(HEMT)
　
分立砷化镓FET
--通用砷化镓场效应晶体管(FET)
--移动通信用L波段高功率砷化镓场效应晶体管(FET)
--通用功率砷化镓场效应晶体管(FET)芯片
　
内部匹配型功率FET
--低失真内部匹配型砷化镓场效应晶体管(FET)
　
砷化镓MMIC
--移动通信用单片微波集成电路(MMIC)驱动放大器
　
--14GHz波段VSAT用单片微波集成电路(MMIC)功率放大器
--准毫米波单片微波集成电路(MMIC)
--直播卫星(DBS)用单片微波集成电路(MMIC)
--砷化镓微波分频器(Prescalar)集成电路
　
GaAs FET Chips and HEMT Chips
GaAs FET Chips for General Purpose Applications
Part Number Output Power at 1dB G.C.P
P 1dB (typ)
(dBm) Power Gain at 1dB G.C.P
G 1dB (typ)
(dB) Power-added Efficiency
η add (typ)
(%) frequency
f
(GHz) Drain Source Voltage
V DS
(V) Drain Source Current
I DS
(mA) Chip Type Frequency Band
FLC087XP 28.5 7.0 31.5 8.0 10 180 XP C
FLC157XP 31.5 6.0 29.5 8.0 10 360 XP
FLC307XP 34.8 9.5 37.0 4.0 10 720 XP
FSX017X 21.5 11.0 42.0 8.0 8 38 X X
FSX027X 24.5 10.0 41.0 8.0 8 77 X
FLX257XV 33.5 7.5 31.0 10.0 10 600 XV
FLK017XP 20.5 8.0 26.0 14.5 10 36 XP Ku
FLK027XV * 24.0 7.0 32.0 14.5 10 60 XP/XV
FLK057XV 27.0 7.0 32.0 14.5 10 120 XV
FLK107XV 30.0 6.5 31.0 14.5 10 240 XV
FLK207XV 32.5 6.0 27.0 14.5 10 480 XV

X Conventional
XP Plated Heat Sink
XV Via Hole PHS
　
* : XP also available 　
　

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HEMT Chips for Low Noise Applications
Part Number Noise Figure
NF (typ)
(dB) Associated Gain
Gas (typ)
(dB) frequency
f
(GHz) Drain Source Voltage
V DS
(V) Drain Source Current
I DS
(mA) Frequency Band
FHX04X 0.75 10.5 12.0 2 10 X/Ku
FHX05X 0.9 10.5 12.0 2 10
FHX06X 1.10 10.5 12.0 2 10
FHX13X 0.45 13.0 12.0 2 10
FHX14X 0.55 13.0 12.0 2 10
FHX35X 1.20 10.0 12.0 3 10
FHX45X 0.55 12.0 12.0 2 10
FHR02X 1.0 9.0 18.0 2 10 K
FHR20X 0.75 10.0 18.0 2 5

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Super Low Noise Packaged HEMTs
Super Low Noise Packaged HEMT (High Electron Mobility Transistor)
Part Number Noise Figure
NF (typ)
(dB) Associated Gain
Gas (typ)
(dB) frequency
f
(GHz) Drain Source Voltage
V DS
(V) Drain Source Current
I DS
(mA) Package Type Frequency Band
FHC40LG 0.30 15.5 4.0 2 10 LG C
FHX13LG 0.45 13.0 12.0 2 10 LG X/Ku
FHX14LG 0.55 13.0 12.0 2 10 LG
FHX04LG 0.75 10.5 12.0 2 10 LG
FHX05LG 0.90 10.5 12.0 2 10 LG
FHX06LG 1.10 10.5 12.0 2 10 LG
FHX35LG 1.20 10.0 12.0 3 10 LG

Tc(op) = +25C, All measurement values are shown as standard values
Note: FSU01LG, FSU02LG, and FSX017LG devices are short lead.
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Discrete GaAs FETs
General Purpose GaAs FET
Part Number Test Condition1 Output power at
1dB G.C.P
P 1dB
(dBm) Power Gain at
1dB G.C.P
G 1dB
(dB) Test Condition2 Noise Figure
NF
Condition2 Associated Gain
Gas
Condition2 Package Application
FSU01LG f=2GHz
V DS =6V
I DS =40mA 20 19 f=2GHz
V DS =3V
I DS =10mA 0.55 18.5 LG Medium Power Amplifier
FSU02LG f=2GHz
V DS =6V
I DS =80mA 23 17 f=2GHz
V DS =3V
I DS =20mA 1.5 17.5 LG
FSX027WF f=8GHz
V DS =8V
I DS =77mA 24.5 10 - - - WF
FSX017WF f=8GHz
V DS =8V
I DS =39mA 21.5 11 - - - WF
FSX56LP f=10GHz
V DS =3V
I DS =30mA 15 6 - - - LP BS Oscillator
FSX017LG f=12GHz
V DS =4V
I DS =30mA 16 8 - - - LG Medium Power Amplifier

*1: Internally matched type; *2: Push-pull FET type; *3: Pout; *4: GL (small signal gain); *5: I DS (DC)
Note: Tc = +25C. All measurement values are shown as standard values.
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L-band GaAs-FET for Mobile Communication System
Part number Band Output Power at 1dB
G.C.P
P 1dB
Power Gain at 1dB
G.C.P
G 1dB Power Added Efficiency
η add
(%) frequency
f
(GHz) Drain-Source Voltage
V DS
(V) Drain Current
I DS
(mA) Thermal Resistance
(癈/W)
package
type Feature.
Application
FLU10XM L 29.5 13.5 47 2 10 180 25 XM High gain, surface mount package
FLU17XM 32.5 12.5 46 2 360 15
FLU35XM 35.5 11.5 46 2 720 7.5
FLL107ME 29.5 13.5 47 2.3 180 25 ME High gain
High Output Amplifier
FLL177ME 32.5 12.5 46 2.3 360 15
FLL357ME 33.5 11.5 46 2.3 720 7.5
FLL57MK 36 11.5 37 2.3 990 6.2 MK
FLL120MK 40 10.0 40 2.3 2200 3.3
FLL200IB-1 *1 42.5 13.0 35 1.5 4800 1.6 IB
FLL200IB-2 *1 42.5 11.0 34 2.3 4800 1.6
FLL200IB-3 *1 42.5 11.0 34 2.6 4800 1.6
FLL300IL-1 44.5 13.0 45 0.9 6000 1.0 IL
FLL300IL-2 44.5 12.0 44 1.8 6000 1.0
FLL300IL-3 44.5 10.0 42 2.6 6000 1.0
FLL300IP-4 *2 44.5 8.0 40 3.6 6000 *5 1.0 IP Push-pull type.
High gain, high output amplifier
FLL310IQ-3A *2 45.0 9.0 40 2.7 7000 1.0 IQ
FLL400IP-2 *2 45.5 10.0 44 1.96 12 2000 *5 1.0 IP
FLL400IP-3 *2 45.5 9.0 43 2.5 2000 *5 1.0
FLL600IQ-2 *2 48 10.5 43 1.96 4000 *5 0.8 IQ
FLL600IQ-2C *2 48.0 *3 12.0 *4 51 2.17 1500 *5 0.8
FLL600IQ-3 *2 48.0 10.0 43 2.7 4000 *5 0.8
FLL800IQ-2C *2 49.0 *3 11.0 *4 50 2.17 2000 *5 0.8
FLL810IQ-3C *2 49.0 *3 12.0 *4 50 2.6 5000 0.8
FLL810IQ-4C *2 49.0 *3 9.5 *4 45 3.6 5000 0.8
FLL1200IU-2 *2 50.8 *3 11.0 *4 44 1.96 5000 0.6 IU
FLL1200IU-3 *2 50.8 *3 11.0 *4 44 2.5 5000 0.6
FLL1500IU-2C *2 51.8 *3 12.0 *4 48 2.17 4000 *5 0.55
FLL2400IU-2C *2 53.8 *3 11.5 *4 - 2.17 6000 *5 0.45

*1 : Input Matched
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General Purpose Power GaAs-FET
Part Number Output Power at 1dB G.C.P
P 1dB (typ)
(dBm) Power Gain at 1dB G.C.P
G 1dB (typ)
(dB) Power-added Efficiency
η add (typ)
(%) frequency
f
(GHz) Drain Source Voltage
V DS
(V) Drain Source Current
I DS
(mA) Thermal Resistance
R th (typ)
(癈/W) Package Type Frequency Band
FLC057WG 27.0 9.0 38.0 8.0 10 120 27 WG C
FLC097WF 28.8 8.5 35.0 6.0 10 180 25 WF
FLC107WG 30.0 8.0 36.0 8.0 10 240 16 WG
FLC167WF 31.8 7.5 35.0 6.0 10 360 15 WF
FLC257MH-6 *1 34.0 9.0 36.0 6.4 10 600 8 MH
FLC257MH-8 *1 34.0 8.0 35.0 8.5 10 600 8 MH
FLC317MG-4 *1 34.8 9.5 37.0 4.2 10 720 8 MG
FLX107MH-12 *1 30.0 7.5 33.0 12.5 10 240 15 MH X
FLX207MH-12 *1 32.5 7.0 28.0 12.5 10 480 10 MH
FLK017WF 20.5 7.5 26.0 14.5 10 36 65 WF Ku
FLK027WG 24.0 7.0 32.0 14.5 10 60 40 WG
FLK057WG 27.0 7.0 32.0 14.5 10 120 20 WG
FLK107MH-14 *1 30.0 6.5 31.0 14.5 10 240 15 MH
FLK207MH-14 *1 32.5 6.0 27.0 14.5 10 480 10 MH

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Low Distortion Internally Matched GaAs-FET Characteristics
Part Number Band 3rd Order Inter-modulation Distortion
IM3
(dBc) Output Power at 1dB G.C.P
P 1dB
(dBm) Power Gain at 1dB G.C.P
G 1dB
(dB) Power added Efficiency Frequency
f
(GHz) Drain-Source Voltage
V DS (V) Drain Current
I DS (mA) Thermal Resistance
(癈/W) Package Special Application
FLM3135-4F
FLM3135-8F
FLM3135-12F
FLM3135-18F S -45
-45
-45
-45 36.5
39.5
41.5
43 12
11
11.5
10.5 38
37
40
37 3.1~3.5
3.1~3.5
3.1~3.5
3.1~3.5 10 1100
2200
3400
4800 5
3
2.3
1.6 IB
IB
IK
IK High output amplifier

Impedance matched = 50Ω

External circuit not required

Each is designed for standard communication frequency band
FLM3439-4F
FLM3439-8F
FLM3439-12F
FLM3439-18F
FLM3439-25F -46
-46
-46
-46
-46 36.5
39.5
41.5
43
44.5 12
11
11.5
10.5
10.5 38
37
40
37
41 3.4~3.9
3.4~3.9
3.4~3.9
3.4~3.9
3.4~3.9 1100
2200
3400
4800
6800 5
3
2.3
1.6
1.4 IB
IB
IK
IK
IK
FLM3742-4F
FLM3742-8F
FLM3742-12F
FLM3742-18F
FLM3742-25F C -46
-46
-46
-46
-46 36.5
39.5
41.5
43
44.5 12
11
11.5
10.5
10.5 38
37
40
37
41 3.7~4.2
3.7~4.2
3.7~4.2
3.7~4.2
3.7~4.2 1100
2200
3250
4800
6200 5
3
2.3
1.6
1.4 IB
IB
IK
IK
IK
FLM4450-4F
FLM4450-8F
FLM4450-12F
FLM4450-18F
FLM4450-25F -46
-46
-46
-46
-46 36.5
39.5
41.5
43
44.5 11
10
10.5
9.5
9.5 37
36
39
36
40 4.4~5.0
4.4~5.0
4.4~5.0
4.4~5.0
4.4~5.0 1100
2200
3250
4800
6200 5
3
2.3
1.6
1.4 IB
IB
IK
IK
IK
FLM5359-4F
FLM5359-8F
FLM5359-12F
FLM5359-18F
FLM5359-25F -46
-46
-46
-46
-46 36.5
39.5
41.5
43
44.5 10.5
9.5
9.5
8.5
8.5 37
36
38
35
39 5.3~5.9
5.3~5.9
5.3~5.9
5.3~5.9
5.3~5.9 1100
2200
3250
4800
6200 5
3
2.3
1.6
1.4 IB
IB
IK
IK
IK
FLM5964-4F
FLM5964-6F
FLM5964-8F
FLM5964-12F
FLM5964-18F
FLM5964-25F -46
-46
-46
-46
-46
-46 36.5
38.5
39.5
41.5
43
44.5 10
10
10
10
10
10 37
37
37
37
37
37 5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4
5.9~6.4 1100
1625
2200
3250
4875
6500 5
4
3
2.3
1.6
1.4 IB
IB
IB
IK
IK
IK
FLM5972-8F -45 39.0 8.5 31 5.9~7.2 2200 3.0 IB
FLM6472-4F
FLM6472-6F
FLM6472-8F
FLM6472-12F
FLM6472-18F
FLM6472-25F -46
-46
-46
-46
-46
-46 36.5
38.5
39.5
41.5
43
44.5 9.5
9.5
9.5
9.5
9.5
9.5 36
37
36
37
37
38 6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2
6.4~7.2 1100
1625
2200
3250
4875
6500 5
4
3
2.3
1.6
1.4 IB
IB
IB
IK
IK
IK
FLM7179-4F
FLM7179-6F
FLM7179-8F
FLM7179-12F
FLM7179-18F -46
-46
-46
-46
-46 36.5
38.5
39.5
41.5
42.5 9
9
9
9
8 35
34
35
38
30 7.1~7.9
7.1~7.9
7.1~7.9
7.1~7.9
7.1~7.9 1100
1625
2200
3250
4875 5
4
3
2.3
1.6 IB
IB
IB
IK
IK
FLM7185-6F
FLM7185-12F -45
-45 38.0
41.0 8
8 30
30 7.1~8.5
7.1~8.5 1625
3500 4
2.3 IB
IK
FLM7785-4F
FLM7785-6F
FLM7785-8F
FLM7785-12F -46
-46
-46
-46 36.5
38.5
39.5
41.5 8.5
8.5
8.5
8.5 35
31
34
34 7.7~8.5
7.7~8.5
7.7~8.5
7.7~8.5 1100
1755
2200
3500 5
4
3
2.3 IB
IB
IB
IK
FLM8596-4F
FLM8596-8F
FLM8596-12F X,
Ku -45
-45
-45 36.5
39.0
40.5 7.5
7.5
7.5 29
29
25 8.5~9.6
8.5~9.6
8.5~9.6 1100
2200
3600 5
3
2.3 IA
IB
IB
FLM0910-3F
FLM0910-4F
FLM0910-8F -46
-46
-46 35
36
39 7.5
7.5
7.5 29
29
29 9.5~10.5
9.5~10.5
9.5~10.5 900
1100
2200 5
5
3 IA
IA
IB
FLM1011-3F
FLM1011-4F
FLM1011-6F
FLM1011-8F
FLM1011-12F -46
-46
-45
-46
-45 35
36
37.5
39
40.5 7.5
7
7.5
7
6 29
29
28
29
25 10.7~11.7
10.7~11.7
10.7~11.7
10.7~11.7
10.7~11.7 900
1100
1800
2200
3600 5
5
4
3
2.3 IA
IA
IA
IB
IB
FLM1213-4F
FLM1213-6F
FLM1213-8F
FLM1213-12F -46
-45
-46
-45 36
37.5
39
40.5 6.5
7
6.5
5.5 28
27
28
24 12.7~13.2
12.7~13.2
12.7~13.2
12.7~13.2 1100
1800
2200
3600 5
4
3
2.3 IA
IA
IA
IB
FLM1314-3F
FLM1314-6F -45
-45 35
37.5 5.5
5.5 25
22 13.75~14.5
13.75~14.5 900
1800 5
4 IA
IA
FLM1414-3F
FLM1414-4F
FLM1414-6F
FLM1414-8F
FLM1414-12F -46
-46
-46
-46
- 35
36
37.5
39
40.5 6.5
6
6.5
6
5 27
27
24
27
23 14.0~14.5
14.0~14.5
14.0~14.5
14.0~14.5
14.0~14.5 900
1100
1800
2200
3600 5
5
4
3
2.3 IA
IA
IA
IA
IB
FLM1415-3F
FLM1415-6F -45
-45 34.5
37 5.5
5.5 23
20 14.5~15.3
14.5~15.3 900
1800 5
4 IA
IA

Note: Tc= +25C. All measurement values are shown as standard values.
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Driver Amplifier MMIC for Mobile Communication
Part Number frequecy
f
GHz Output power at 1dB G.C.P
P 1dB
dBm (typ.) small signal gain
G
dB Gain Flatness
ΔG
dB (typ.) DC Input Current
I DD / I GG
mA Feature
FMM5027VJ 0.8~3.0 26 19 2 220/2 broad band, high output
FMM5046VF 2.2 36 30 - 1700/35 high output
FMM5049VT 2.2 41 *1 33 - 2500/7 high output

Note *1 : Pout;
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Power Amplifier MMIC for 14GHz Band VSAT
Part Number frequecy
f
GHz Output power at 1dB G.C.P
P 1dB
dBm (typ.) Linear Gain
G
dB (typ.) Gain Flatness
ΔG
dB (typ.)
FMM5010VF 14.0~14.5 21 25 1.0
FMM5017VF 14.0~14.5 29 20 1.0
FMM5007VF 14.0~14.5 31 20 1.0
FMM5522GJ 14.0~14.5 35 26 *1 2.0 *3
FMM5051VF 13.75~14.5 31.5 *2 31.5 1.5
FMM5048GJ 13.75~14.5 36 26 *1 3.0 *3

*1 : G1dB; *2 : Pout (Pin=3dBm); *3 : Maximum;
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Quasi Millimeter-Wave MMIC
Power Amplifier MMIC for VSAT Characteristics
Type Frequency Range
(GHz)
　 Drain Voltage
V DD (V) Output Power at 1dB G.C.P
P1dB (dBm) Power Gain at 1dB G.C.P
G1dB (dB) Power Added Efficiency
η add (%)
FMM5802X 27.5~31.5 6 25.5 9 20
FMM5803X 27.5~30.0 30 *2 14 20 *2
30.0~31.5 12
FMM5804X 17.5~30.0 25 18 18
30.0~31.5 23
FMM5805X 17.5~20.0 31 21 30
FMM5806X 24.0~27.0 26 9.5 25
FMM5807X 21.0~24.0 29 14 *1 20 *1
24.0~27.0 30
FMM5815X 17.5~20.0 31 21 30 *3
FMM5816X 37.0~42.0 25 14 20

*1: f=21.0~24.0GHz (typ.), *2: f=27.5~31.5GHz (typ.), *3: ηadd at P1dB
(All characteristic are typical value)
　
Quasi Millimeter-wave Power Amplifier (Package) Characteristics
Type Frequency Range
(GHz)
　 Drain Voltage
V DD (V) Output Power at 1dB G.C.P
P1dB (dBm) Power Gain at 1dB G.C.P
G1dB (dB) Power Added Efficiency
η add (%)
FMM5805GJ-1 17.7~19.7 6 31 20 27
FMM5807GJ-1 21.2~23.6 29 13 18
FMM5815GJ-1 17.7~19.7 31 20 25
FMM5811GJ-1 17.7~23.6 24.5 15 20
FMM5815GJ-1 17.7~19.7 31 20 25

　
Quasi Millimeter-wave Low Noise Amplifier Characteristics
Type Frequency Range
(GHz) Drain Voltage
VDD (V) Noise Figure
NF (dB) Associated Gain
Gas (dB) Chip Size
(mm)
FMM5701X 18~28 5 1.5 *1 13.5 *1 0.45 x 0.52
FMM5702X 27~32 4 1.6 *2 13 *2 0.96 x 0.96
FMM5703X 24~32 3 2 *3 18 *3 1.56 x 1.16
FMM5704X 36~40 3 2 *4 18 *4 1.46 x 1.06

　
K~Ka Band Converter MMIC (Chip) Characteristics
Type Usable Frequency Range
(GHz) Conversion Gain
(dB) Associated Current
(mA) Features
FMM5116X 20~32 -8 140 Built-in frequency multiplier
(times 2)
FMM5117X -10

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MMIC for DBS (Direct Broadcast Satellite)
Down Converter MMIC for DBS FMM5107ML
　 FMM5107MLT4E1
Single Oscillator MMIC for DBS FMM5202ML
Dual Oscillator MMIC for DBS FMM5201ML
　 FMM5201MLT4E1

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GaAs Microwave Frequency Divider (Prescalar) IC
Part Number Power Supply
Current (typ.)
I SS (mA) Operating Frequency Range
f
(GHz) Supply Voltage
V DD (typ.)
(V) Power Output
Po (typ.)
(dBm) Ambient Temp. Range
(癈) Package
FMM1061VJ * 120 2~6 5 4 -30 ~ +70 VJ
FMM1062ML * 20 2~6 3 -4 -40 ~ +85 ML
FMM106HG 140 2~6.5 5 4 -55 ~ +85 HG
FMM1103VJ * 90 2~12 5 8 -40 ~ +85 VJ

Note * : Part are available in Tape and Reel.

　