IRFPF50详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 900V 6.7A TO-247AC
- 系列:-
- 制造商:Vishay Siliconix
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:900V
- 电流_连续漏极333Id4440a025000C:6.7A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:1.6 欧姆 @ 4A,10V
- Id时的Vgs333th444(最大):4V @ 250µA
- 闸电荷333Qg4440a0Vgs:200nC @ 10V
- 输入电容333Ciss4440a0Vds:2900pF @ 25V
- 功率_最大:190W
- 安装类型:通孔
- 封装/外壳:TO-247-3
- 供应商设备封装:TO-247-3
- 包装:管件
IRFPF50PBF详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 900V 6.7A TO-247AC
- 系列:-
- 制造商:Vishay Siliconix
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:900V
- 电流_连续漏极333Id4440a025000C:6.7A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:1.6 欧姆 @ 4A,10V
- Id时的Vgs333th444(最大):4V @ 250µA
- 闸电荷333Qg4440a0Vgs:200nC @ 10V
- 输入电容333Ciss4440a0Vds:2900pF @ 25V
- 功率_最大:190W
- 安装类型:通孔
- 封装/外壳:TO-247-3
- 供应商设备封装:TO-247-3
- 包装:管件
- Card Edge, Edgeboard Connectors Sullins Connector Solutions CONN EDGECARD 88POS R/A .156 SLD
- 陶瓷 Murata Electronics North America 0603(1608 公制) CAP CER 1PF 250V NP0 0603
- 功率,高于 2 安 Omron Electronics Inc-IA Div RELAY GEN PURPOSE 4PST 25A 24V
- FET - 单 Vishay Siliconix TO-262-3,长引线,I²Pak,TO-262AA MOSFET N-CH 60V 17A TO-262
- 矩形 Assmann WSW Components IDC CABLE - HKC10H/AE10G/HKC10H
- 矩形 Assmann WSW Components IDC CABLE - HKC14H/AE14G/HKC14H
- FET - 单 International Rectifier TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 55V 56A DPAK
- 跳线,预压接线 Hirose Electric Co Ltd JUMPER-H2730TR/C2016B/X 10"
- 陶瓷 Murata Electronics North America 0603(1608 公制) CAP CER 1.1PF 250V NP0 0603
- 矩形 Assmann WSW Components IDC CABLE - HKC14H/AE14G/HKC14H
- FET - 单 International Rectifier TO-262-3,长引线,I²Pak,TO-262AA MOSFET N-CH 55V 18A TO-262
- 矩形 Assmann WSW Components IDC CABLE - HKC16H/AE16G/HKC16H
- FET - 单 International Rectifier TO-252-3,DPak(2 引线+接片),SC-63 MOSFET N-CH 75V 42A DPAK
- 跳线,预压接线 Hirose Electric Co Ltd JUMPER-H2728TR/C2065B/X 10"
- 陶瓷 Murata Electronics North America 0603(1608 公制) CAP CER 1.2PF 250V NP0 0603