IPB80N06S2-09 全国供应商、价格、PDF资料
IPB80N06S2-09详细规格
- 类别:FET - 单
- 描述:MOSFET N-CH 55V 80A TO263-3
- 系列:OptiMOS™
- 制造商:Infineon Technologies
- FET型:MOSFET N 通道,金属氧化物
- FET特点:标准
- 漏极至源极电压333Vdss444:55V
- 电流_连续漏极333Id4440a025000C:80A
- 开态Rds(最大)0a0IdwwwwVgs0a025000C:8.8 毫欧 @ 50A,10V
- Id时的Vgs333th444(最大):4V @ 125µA
- 闸电荷333Qg4440a0Vgs:80nC @ 10V
- 输入电容333Ciss4440a0Vds:2360pF @ 25V
- 功率_最大:190W
- 安装类型:表面贴装
- 封装/外壳:TO-263-3,D²Pak(2 引线+接片),TO-263AB
- 供应商设备封装:PG-TO263-3
- 包装:带卷 (TR)
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SYNC 1024X18 10NS 64TQFP
- 线性 - 比较器 ON Semiconductor 14-SOIC(0.154",3.90mm 宽) IC COMPARATOR QUAD SGL 14-SOIC
- FET - 单 Infineon Technologies TO-263-3,D²Pak(2 引线+接片),TO-263AB MOSFET N-CH 55V 77A TO263-3
- PMIC - 电源分配开关 Texas Instruments IC POWER SW USB SGL PORT 8-SOIC
- 接口 - 驱动器,接收器,收发器 IDT, Integrated Device Technology Inc 48-BSSOP(0.295",7.50mm 宽) PHYCEIVER LOW PWR 3.3V 48-SSOP
- 接口 - 电信 Texas Instruments 8-SOIC(0.154",3.90mm 宽) IC PLL OSCILLATOR 8-SOIC
- 存储器 IDT, Integrated Device Technology Inc 256-LBGA IC SRAM 2MBIT 133MHZ 256BGA
- 逻辑 - FIFO IDT, Integrated Device Technology Inc 64-LQFP IC FIFO SYNC 1024X18 15NS 64TQFP
- 逻辑 - 缓冲器,驱动器,接收器,收发器 IDT, Integrated Device Technology Inc 20-TSSOP(0.173",4.40mm 宽) IC BUFF/DVR DUAL N-INV 20TSSOP
- PMIC - 电源分配开关 Texas Instruments 8-SOIC(0.154",3.90mm 宽) IC USB POWER SWITCH 8-SOIC
- 接口 - 电信 Texas Instruments 8-DIP(0.300",7.62mm) IC TONE DECODR PHAS LOC LP 8-DIP
- 接口 - 驱动器,接收器,收发器 IDT, Integrated Device Technology Inc 48-BSSOP(0.295",7.50mm 宽) PHYCEIVER LOW PWR 3.3V 48-SSOP
- 存储器 IDT, Integrated Device Technology Inc 208-LFBGA IC SRAM 2MBIT 166MHZ 208FBGA
- 逻辑 - 缓冲器,驱动器,接收器,收发器 IDT, Integrated Device Technology Inc 20-TSSOP(0.173",4.40mm 宽) IC BUFF/DVR DUAL N-INV 20TSSOP
- 线性 - 比较器 Texas Instruments 14-DIP(0.300",7.62mm) IC QUAD DIFF COMPARATOR 14-DIP